Archivio Istituzionale della RicercaThis paper presents the design and characterization of a Doherty power amplifier for K-band applications based on the GaAs 150nm pHEMT technology of Qorvo. For the output power combiner, a wideband design approach, based on embedding the output capacitance of the active devices in the combiner, is applied. A state-of-the-art bandwidth of 4 GHz is achieved: in the 21 GHz-25 GHz range, the output power is above 29.5 dBm, with an associated PAE higher than 30 %. At 6 dB output back-off, the PAE is above 19% while the corresponding gain is higher than 10 dB.
Watt-level 21-25 GHz Integrated Doherty Power Amplifier in GaAs Technology / Ramella, Chiara; Camarchia, Vittorio; Piacibello, Anna; Pirola, Marco; Quaglia, Roberto. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - STAMPA. - 31:5(2021), pp. 505-508. [10.1109/LMWC.2021.3069555]
Watt-level 21-25 GHz Integrated Doherty Power Amplifier in GaAs Technology
Ramella, Chiara;Camarchia, Vittorio;Piacibello, Anna;Pirola, Marco;
2021
Abstract
This paper presents the design and characterization of a Doherty power amplifier for K-band applications based on the GaAs 150nm pHEMT technology of Qorvo. For the output power combiner, a wideband design approach, based on embedding the output capacitance of the active devices in the combiner, is applied. A state-of-the-art bandwidth of 4 GHz is achieved: in the 21 GHz-25 GHz range, the output power is above 29.5 dBm, with an associated PAE higher than 30 %. At 6 dB output back-off, the PAE is above 19% while the corresponding gain is higher than 10 dB.
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https://hdl.handle.net/11583/2881076