Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems

Ricciardi, C.; Bennici, E.; Cocuzza, M.; Mandracci, P.; Bich, D.; Guglielmetti, V.; Barucca, G.

doi:10.1016/S0040-6090(02)01222-1

Large area (up to 4 inch) polycrystalline 3C-SiC films have been deposited by electron cyclotron resonance chemical vapor deposition technique. Crystalline and non-crystalline substrates such as (1 0 0) Si wafers, thermally oxidized Si wafers and Al2O3 ceramic sheets have been used, maintaining the same deposition conditions. The structural and morphological properties of the films were analyzed by means of transmission electron microscopy and X-ray diffractometry, while surface morphology was characterized by atomic force microscopy. Preliminary results on technological processes for the realization of polycrystalline SiC based micro-electro-mechanical systems are reported. © 2002 Elsevier Science B.V. All rights reserved.

Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems / Ricciardi, C.; Bennici, E.; Cocuzza, M.; Mandracci, P.; Bich, D.; Guglielmetti, V.; Barucca, G.. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 427:1-2(2003), pp. 187-190. [10.1016/S0040-6090(02)01222-1]

Titolo:	Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems
Autori:	RICCIARDI, CARLO BENNICI, Erica COCUZZA, MATTEO MANDRACCI, PIETRO Bich D. Guglielmetti V. Barucca G. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2003
Rivista:	THIN SOLID FILMS
Digital Object Identifier (DOI):	http://dx.doi.org/10.1016/S0040-6090(02)01222-1
Appare nelle tipologie:	1.1 Articolo in rivista

File in questo prodotto:

File	Descrizione	Tipologia	Licenza
Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems.pdf	Articolo principale	2a Post-print versione editoriale / Version of Record	Non Pubblico - Accesso privato/ristretto	Administrator Richiedi una copia

Utilizza questo identificativo per citare o creare un link a questo documento:
http://hdl.handle.net/11583/2860942

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

PORTO @ Archivio Istituzionale della Ricerca

File in questo prodotto: