Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems

Ricciardi, C.; Bennici, E.; Cocuzza, M.; Mandracci, P.; Bich, D.; Guglielmetti, V.; Barucca, G.

doi:10.1016/S0040-6090(02)01222-1

Large area (up to 4 inch) polycrystalline 3C-SiC films have been deposited by electron cyclotron resonance chemical vapor deposition technique. Crystalline and non-crystalline substrates such as (1 0 0) Si wafers, thermally oxidized Si wafers and Al2O3 ceramic sheets have been used, maintaining the same deposition conditions. The structural and morphological properties of the films were analyzed by means of transmission electron microscopy and X-ray diffractometry, while surface morphology was characterized by atomic force microscopy. Preliminary results on technological processes for the realization of polycrystalline SiC based micro-electro-mechanical systems are reported. © 2002 Elsevier Science B.V. All rights reserved.

Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems / Ricciardi, C.; Bennici, E.; Cocuzza, M.; Mandracci, P.; Bich, D.; Guglielmetti, V.; Barucca, G.. - In: THIN SOLID FILMS. - ISSN 0040-6090. - STAMPA. - 427:1-2(2003), pp. 187-190.

Titolo:	Characterization of polycrystalline SiC layers grown by ECR-PECVD for micro-electro-mechanical systems
Autori:	RICCIARDI, CARLO BENNICI, Erica COCUZZA, MATTEO MANDRACCI, PIETRO Bich D. Guglielmetti V. Barucca G. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2003
Rivista:	THIN SOLID FILMS
Digital Object Identifier (DOI):	http://dx.doi.org/10.1016/S0040-6090(02)01222-1
Appare nelle tipologie:	1.1 Articolo in rivista

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