Organic electrochemical transistors (OECTs) represent a powerful and versatile type of organic-based device, widely used in biosensing and bioelectronics due to potential advantages in terms of cost, sensitivity, and system integration. The benchmark organic semiconductor they are based on is poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), the electrical properties of which are reported to be strongly dependent on film morphology and structure. In particular, the literature demonstrates that film processing induces morphostructural changes in terms of conformational rearrangements in the PEDOT:PSS in-plane phase segregation and out-of-plane vertical separation between adjacent PEDOT-rich domains. Here, taking into account these indications, we show the thickness-dependent operation of OECTs, contextualizing it in terms of the role played by PEDOT:PSS film thickness in promoting film microstructure tuning upon controlled-atmosphere long-lasting thermal annealing (LTA). To do this, we compared the LTA-OECT response to that of OECTs with comparable channel thicknesses that were exposed to a rapid thermal annealing (RTA). We show that the LTA process on thicker films provided OECTs with an enhanced amplification capability. Conversely, on lower thicknesses, the LTA process induced a higher charge carrier modulation when the device was operated in sensing mode. The provided experimental characterization also shows how to optimize the OECT response by combining the control of the microstructure via solution processing and the effect of postdeposition processing.
PEDOT:PSS Morphostructure and ion-to-electron transduction and amplification mechanisms in organic electrochemical transistors / D'Angelo, P.; Tarabella, G.; Romeo, A.; Marasso, S. L.; Verna, A.; Cocuzza, M.; Peruzzi, C.; Vurro, D.; Iannotta, S.. - In: MATERIALS. - ISSN 1996-1944. - ELETTRONICO. - 12:1(2019), p. 9.
|Titolo:||PEDOT:PSS Morphostructure and ion-to-electron transduction and amplification mechanisms in organic electrochemical transistors|
|Data di pubblicazione:||2019|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.3390/ma12010009|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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