Being promising elements for neuromorphic computation, memristive devices have been often described as crucial elements for mimicking important synapse properties, such as memory and learning. Among them, organic memristive devices (OMDs) can claim low-cost fabrication processes and the easy tunability of their electrical properties. Up to now, the major bottleneck for their larger uses in neuromorphic computation is low rate of the resistance switching and stability. Herein, a new approach is reported, based on the use of a liquid electrolyte, leading to the manufacturing of OMD with higher stability and faster resistive switching.
On the Interpretation of Hysteresis Loop for Electronic and Ionic Currents in Organic Memristive Devices / Battistoni, S.; Verna, A.; Marasso, S. L.; Cocuzza, M.; Erokhin, V.. - In: PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE. - ISSN 1862-6300. - ELETTRONICO. - 217:18(2020), p. 1900985. [10.1002/pssa.201900985]
Titolo: | On the Interpretation of Hysteresis Loop for Electronic and Ionic Currents in Organic Memristive Devices | |
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Data di pubblicazione: | 2020 | |
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Digital Object Identifier (DOI): | http://dx.doi.org/10.1002/pssa.201900985 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/11583/2860892