On the Interpretation of Hysteresis Loop for Electronic and Ionic Currents in Organic Memristive Devices

Battistoni, S.; Verna, A.; Marasso, S. L.; Cocuzza, M.; Erokhin, V.

doi:10.1002/pssa.201900985

Being promising elements for neuromorphic computation, memristive devices have been often described as crucial elements for mimicking important synapse properties, such as memory and learning. Among them, organic memristive devices (OMDs) can claim low-cost fabrication processes and the easy tunability of their electrical properties. Up to now, the major bottleneck for their larger uses in neuromorphic computation is low rate of the resistance switching and stability. Herein, a new approach is reported, based on the use of a liquid electrolyte, leading to the manufacturing of OMD with higher stability and faster resistive switching.

On the Interpretation of Hysteresis Loop for Electronic and Ionic Currents in Organic Memristive Devices / Battistoni, S.; Verna, A.; Marasso, S. L.; Cocuzza, M.; Erokhin, V.. - In: PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE. - ISSN 1862-6300. - ELETTRONICO. - 217:18(2020), p. 1900985. [10.1002/pssa.201900985]

Titolo:	On the Interpretation of Hysteresis Loop for Electronic and Ionic Currents in Organic Memristive Devices
Autori:	Battistoni S. VERNA, ALESSIO MARASSO, SIMONE LUIGI COCUZZA, MATTEO Erokhin V. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2020
Rivista:	PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE
Digital Object Identifier (DOI):	http://dx.doi.org/10.1002/pssa.201900985
Appare nelle tipologie:	1.1 Articolo in rivista

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