This paper presents a wideband class J power amplifier (PA) based on a packaged 10 W GaN HEMT device covering the 3 GHz to 3.8 GHz frequency range. A good trade-off between efficiency and gain has been pursued in synthesizing the second harmonic output termination. The achieved output power is in excess of 41 dBm with drain efficiency ranging from 59 % to 65.5 % and a small signal gain above 14 dB. Preliminary large signal measurements at 3.3 GHz confirm the proper behavior of the PA.

A 3-3.8 GHz Class-J GaN HEMT Power Amplifier / Nasri, Abbas; Estebsari, Motahhareh; Toofan, Siroos; Piacibello, Anna; Ramella, Chiara; Camarchia, Vittorio; Pirola, Marco. - STAMPA. - (2020), pp. 416-419. ((Intervento presentato al convegno 2020 23rd International Microwave and Radar Conference (MIKON) tenutosi a Warsaw, Poland, Poland nel 5-8 Oct. 2020 [10.23919/MIKON48703.2020.9253829].

A 3-3.8 GHz Class-J GaN HEMT Power Amplifier

Nasri, Abbas;Estebsari, Motahhareh;Piacibello, Anna;Ramella, Chiara;Camarchia, Vittorio;Pirola, Marco
2020

Abstract

This paper presents a wideband class J power amplifier (PA) based on a packaged 10 W GaN HEMT device covering the 3 GHz to 3.8 GHz frequency range. A good trade-off between efficiency and gain has been pursued in synthesizing the second harmonic output termination. The achieved output power is in excess of 41 dBm with drain efficiency ranging from 59 % to 65.5 % and a small signal gain above 14 dB. Preliminary large signal measurements at 3.3 GHz confirm the proper behavior of the PA.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2854540