Among many material candidates for next-generation solar cells, quantum dots offer unique opportunities. Aiming to maximally harness their nanoscale bandgap engineering, in this work we outline a multiscale, multiphysics modeling approach for the device level simulation of quantum dot solar cells. Examples of experimental validation are discussed, emphasizing the potential of light trapping techniques towards the implementation of quantum dot based intermediate band solar cells.

Device level modeling of intermediate band quantum dot solar cells / Cappelluti, F.; Elsehrawy, F.; Tibaldi, A.. - ELETTRONICO. - 2020:(2020), pp. 35-36. (Intervento presentato al convegno 20th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2020) tenutosi a Online conference nel 2020) [10.1109/NUSOD49422.2020.9217732].

Device level modeling of intermediate band quantum dot solar cells

Cappelluti F.;Elsehrawy F.;Tibaldi A.
2020

Abstract

Among many material candidates for next-generation solar cells, quantum dots offer unique opportunities. Aiming to maximally harness their nanoscale bandgap engineering, in this work we outline a multiscale, multiphysics modeling approach for the device level simulation of quantum dot solar cells. Examples of experimental validation are discussed, emphasizing the potential of light trapping techniques towards the implementation of quantum dot based intermediate band solar cells.
File in questo prodotto:
File Dimensione Formato  
2020Cappelluti_NUSOD.pdf

non disponibili

Tipologia: 2a Post-print versione editoriale / Version of Record
Licenza: Non Pubblico - Accesso privato/ristretto
Dimensione 1.12 MB
Formato Adobe PDF
1.12 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
2020Cappelluti_NUSOD.PostPrint.pdf

accesso aperto

Tipologia: 2. Post-print / Author's Accepted Manuscript
Licenza: PUBBLICO - Tutti i diritti riservati
Dimensione 655.7 kB
Formato Adobe PDF
655.7 kB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2850885