Archivio Istituzionale della RicercaAmong many material candidates for next-generation solar cells, quantum dots offer unique opportunities. Aiming to maximally harness their nanoscale bandgap engineering, in this work we outline a multiscale, multiphysics modeling approach for the device level simulation of quantum dot solar cells. Examples of experimental validation are discussed, emphasizing the potential of light trapping techniques towards the implementation of quantum dot based intermediate band solar cells.
Device level modeling of intermediate band quantum dot solar cells / Cappelluti, F.; Elsehrawy, F.; Tibaldi, A.. - ELETTRONICO. - 2020:(2020), pp. 35-36. ((Intervento presentato al convegno 20th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2020) tenutosi a Online conference nel 2020 [10.1109/NUSOD49422.2020.9217732].
Device level modeling of intermediate band quantum dot solar cells
Cappelluti F.;Elsehrawy F.;Tibaldi A.
2020
Abstract
Among many material candidates for next-generation solar cells, quantum dots offer unique opportunities. Aiming to maximally harness their nanoscale bandgap engineering, in this work we outline a multiscale, multiphysics modeling approach for the device level simulation of quantum dot solar cells. Examples of experimental validation are discussed, emphasizing the potential of light trapping techniques towards the implementation of quantum dot based intermediate band solar cells.
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https://hdl.handle.net/11583/2850885