The 28 nm system-on-chip (SoC) was irradiated by 12 MeV electron at the China Institute of Atomic Energy (CIAE) for the first time. Soft errors in the on-chip memory (OCM), D-Cache, Register and BRAM blocks were investigated. The obtained device cross sections are almost in the range of 10−13 cm2 to 10−11 cm2 for the blocks. The results demonstrate that electron fluence per pulse and the corresponding prompt dose rates have no influence on the soft errors in 28 nm SoC. The discrepancy was analyzed between proton and electron inducing soft errors in D-Cache and BRAM blocks, too. The secondary electron is considered as the dominant reason for soft errors caused by 12 MeV electron in 28 nm SoC.

Electron inducing soft errors in 28 nm system-on-Chip / Yang, W.; Li, Y.; Zhang, W.; Guo, Y.; Zhao, H.; Wei, J.; Li, Y.; He, C.; Chen, K.; Guo, G.; Du, B.; Sterpone, L.. - In: RADIATION EFFECTS AND DEFECTS IN SOLIDS. - ISSN 1042-0150. - 175:7-8(2020), pp. 745-754. [10.1080/10420150.2020.1759067]

Electron inducing soft errors in 28 nm system-on-Chip

Yang W.;Du B.;Sterpone L.
2020

Abstract

The 28 nm system-on-chip (SoC) was irradiated by 12 MeV electron at the China Institute of Atomic Energy (CIAE) for the first time. Soft errors in the on-chip memory (OCM), D-Cache, Register and BRAM blocks were investigated. The obtained device cross sections are almost in the range of 10−13 cm2 to 10−11 cm2 for the blocks. The results demonstrate that electron fluence per pulse and the corresponding prompt dose rates have no influence on the soft errors in 28 nm SoC. The discrepancy was analyzed between proton and electron inducing soft errors in D-Cache and BRAM blocks, too. The secondary electron is considered as the dominant reason for soft errors caused by 12 MeV electron in 28 nm SoC.
File in questo prodotto:
File Dimensione Formato  
Electron inducing soft errors in 28 nm system on Chip.pdf

non disponibili

Tipologia: 2a Post-print versione editoriale / Version of Record
Licenza: Non Pubblico - Accesso privato/ristretto
Dimensione 1.48 MB
Formato Adobe PDF
1.48 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2845803