This article presents a fully depleted monolithic active pixel sensor technology compatible with a standard deep submicrometer 110-nm CMOS process. Passive test pixels structures, produced in various flavors, have proved the feasibility of 100- and 300-μm-thick active substrates. Active pixel sensors with monolithically integrated analog and digital electronics, consisting of a 24 × 24 array of pixels with 50-μm pitch, have been shown to be fully functional when operating in the full depletion mode. Characterization results obtained with a proton microbeam and a 55 Fe radiation source are presented and discussed.

Fully Depleted MAPS in 110-nm CMOS Process With 100–300-μm Active Substrate / Pancheri, Lucio; Giampaolo, Raffaele A.; Salvo, Andrea Di; Mattiazzo, Serena; Corradino, Thomas; Giubilato, Piero; Santoro, Romualdo; Caccia, Massimo; Margutti, Giovanni; Olave, Jonhatan E.; Rolo, Manuel; Rivetti, Angelo. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 67:6(2020), pp. 2393-2399. [10.1109/TED.2020.2985639]

Fully Depleted MAPS in 110-nm CMOS Process With 100–300-μm Active Substrate

Giampaolo, Raffaele A.;Salvo, Andrea Di;
2020

Abstract

This article presents a fully depleted monolithic active pixel sensor technology compatible with a standard deep submicrometer 110-nm CMOS process. Passive test pixels structures, produced in various flavors, have proved the feasibility of 100- and 300-μm-thick active substrates. Active pixel sensors with monolithically integrated analog and digital electronics, consisting of a 24 × 24 array of pixels with 50-μm pitch, have been shown to be fully functional when operating in the full depletion mode. Characterization results obtained with a proton microbeam and a 55 Fe radiation source are presented and discussed.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2828873