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EnglishThermal stress in microwave power devices is a major issue for space applications, with a detrimental impact on the operating life-time of MMICs on board satellites. To limit this, derating rules are applied to the maximum operating junction temperature, which however limit the potential device performance when GaN/Si technology is employed. In this framework, classical power amplifier design paradigm must be reconsidered, moving to a thermal-aware design approach. To this aim, it is crucial to have access to highly reliable thermal models of the adopted devices. This work will show that, adopting a simplified but effective thermal model and proper design strategy, GaN/Si technology can be successfully adopted for space-compliant MMIC design up to Ka-band. In particular, the preliminary design of a 10W MMIC working in Ka-band at 36 GHz will be presented based on the 100nm gate-length GaN/Si HEMT process from OMMIC foundry.
Thermal-aware GaN/Si MMIC design for space applications / Ramella, C.; Pirola, M.; Reale, A.; Ramundo, M.; Colantonio, P.; Maur, M. A. D.; Camarchia, V.; Piacibello, A.; Giofre, R.. - ELETTRONICO. - 1(2019), pp. 1-6. ((Intervento presentato al convegno 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2019 tenutosi a Tel Aviv (ISR) nel 4-6 Nov. 2019.
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| Titolo: | Thermal-aware GaN/Si MMIC design for space applications |
| Autori: | |
| Data di pubblicazione: | 2019 |
| Abstract: | Thermal stress in microwave power devices is a major issue for space applications, with a detrime...ntal impact on the operating life-time of MMICs on board satellites. To limit this, derating rules are applied to the maximum operating junction temperature, which however limit the potential device performance when GaN/Si technology is employed. In this framework, classical power amplifier design paradigm must be reconsidered, moving to a thermal-aware design approach. To this aim, it is crucial to have access to highly reliable thermal models of the adopted devices. This work will show that, adopting a simplified but effective thermal model and proper design strategy, GaN/Si technology can be successfully adopted for space-compliant MMIC design up to Ka-band. In particular, the preliminary design of a 10W MMIC working in Ka-band at 36 GHz will be presented based on the 100nm gate-length GaN/Si HEMT process from OMMIC foundry. |
| ISBN: | 978-1-5386-9549-4 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| 2019_COMCAS_ESA.pdf | Articolo principale | 2a Post-print versione editoriale / Version of Record | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
| COMCAS_Thermal_corrected.pdf | Articolo | 2. Post-print / Author's Accepted Manuscript | PUBBLICO - Tutti i diritti riservati | Visibile a tuttiVisualizza/Apri |
http://hdl.handle.net/11583/2798369
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