Thermal stress in microwave power devices is a major issue for space applications, with a detrimental impact on the operating life-time of MMICs on board satellites. To limit this, derating rules are applied to the maximum operating junction temperature, which however limit the potential device performance when GaN/Si technology is employed. In this framework, classical power amplifier design paradigm must be reconsidered, moving to a thermal-aware design approach. To this aim, it is crucial to have access to highly reliable thermal models of the adopted devices. This work will show that, adopting a simplified but effective thermal model and proper design strategy, GaN/Si technology can be successfully adopted for space-compliant MMIC design up to Ka-band. In particular, the preliminary design of a 10W MMIC working in Ka-band at 36 GHz will be presented based on the 100nm gate-length GaN/Si HEMT process from OMMIC foundry.
Thermal-aware GaN/Si MMIC design for space applications / Ramella, C.; Pirola, M.; Reale, A.; Ramundo, M.; Colantonio, P.; Maur, M. A. D.; Camarchia, V.; Piacibello, A.; Giofre, R.. - ELETTRONICO. - 1:(2019), pp. 1-6. (Intervento presentato al convegno 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems, COMCAS 2019 tenutosi a Tel Aviv (ISR) nel 4-6 Nov. 2019) [10.1109/COMCAS44984.2019.8958104].
Thermal-aware GaN/Si MMIC design for space applications
Ramella C.;Pirola M.;Camarchia V.;Piacibello A.;
2019
Abstract
Thermal stress in microwave power devices is a major issue for space applications, with a detrimental impact on the operating life-time of MMICs on board satellites. To limit this, derating rules are applied to the maximum operating junction temperature, which however limit the potential device performance when GaN/Si technology is employed. In this framework, classical power amplifier design paradigm must be reconsidered, moving to a thermal-aware design approach. To this aim, it is crucial to have access to highly reliable thermal models of the adopted devices. This work will show that, adopting a simplified but effective thermal model and proper design strategy, GaN/Si technology can be successfully adopted for space-compliant MMIC design up to Ka-band. In particular, the preliminary design of a 10W MMIC working in Ka-band at 36 GHz will be presented based on the 100nm gate-length GaN/Si HEMT process from OMMIC foundry.File | Dimensione | Formato | |
---|---|---|---|
2019_COMCAS_ESA.pdf
accesso riservato
Descrizione: Articolo principale
Tipologia:
2a Post-print versione editoriale / Version of Record
Licenza:
Non Pubblico - Accesso privato/ristretto
Dimensione
678.53 kB
Formato
Adobe PDF
|
678.53 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
COMCAS_Thermal_corrected.pdf
accesso aperto
Descrizione: Articolo
Tipologia:
2. Post-print / Author's Accepted Manuscript
Licenza:
Pubblico - Tutti i diritti riservati
Dimensione
681.66 kB
Formato
Adobe PDF
|
681.66 kB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/2798369