Super junction (SJ) MOSFET is a well-established device in high-density and high frequency power conversion. Soft-switching techniques are usually adopted at high frequency to reduce the power losses into the power devices. However, new challenging issues appear always when the paradigm changes. In fact, unexpected heating and efficiency reduction due to Coss related phenomena are key issues to be faced when SJ MOSFETs are adopted in high-frequency soft-switching applications. The phenomenon appears when large voltage transients are applied to the drain-source terminals as in the case of soft-switching applications. This paper provides analysis of the electrical hysteresis, and proposes an equivalent circuit that may model such a behavior in case of SJ MOSFETs. The loss model of Coss has been validated by comparing the measurements with the simulation runs performed by means of the Simulink package.

Modeling of the power losses due to cOSS in SJ MOSFETs submitted to ZVS: Identification of the passive parameters by a genetic algorithm / Raciti, A.; Rizzo, S. A.; Salerno, N.; Susinni, G.; Scollo, R.; Scuto, A.; Musumeci, S.; Armando, E. G.. - ELETTRONICO. - (2018), pp. 1321-1326. ((Intervento presentato al convegno IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society tenutosi a Washington, DC, USA nel October 2018 [10.1109/IECON.2018.8592683].

Modeling of the power losses due to cOSS in SJ MOSFETs submitted to ZVS: Identification of the passive parameters by a genetic algorithm

Musumeci S.;Armando E. G.
2018

Abstract

Super junction (SJ) MOSFET is a well-established device in high-density and high frequency power conversion. Soft-switching techniques are usually adopted at high frequency to reduce the power losses into the power devices. However, new challenging issues appear always when the paradigm changes. In fact, unexpected heating and efficiency reduction due to Coss related phenomena are key issues to be faced when SJ MOSFETs are adopted in high-frequency soft-switching applications. The phenomenon appears when large voltage transients are applied to the drain-source terminals as in the case of soft-switching applications. This paper provides analysis of the electrical hysteresis, and proposes an equivalent circuit that may model such a behavior in case of SJ MOSFETs. The loss model of Coss has been validated by comparing the measurements with the simulation runs performed by means of the Simulink package.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2788212