PORTO @ 
Archivio Istituzionale della Ricerca
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishThis paper deals with the performance evaluation of enhanced MOSFET based on a trench gate layout in full- bridge DC-DC power converter with synchronous rectifiers for telecom power supply applications. Outlines of the switches design needs both in the primary and secondary side of the insulated full-bridge converter are treated. In particular, the synchronous rectifier MOSFETs selection criteria are highlighted. Main focus of the paper is on minimization of devices power losses contribution in order to improve power converter efficiency. Furthermore, an extended characterization of the advanced MOSFET devices in static and dynamic conditions is carried out.
Full-bridge DC-DC power converter for telecom applications with advanced trench gate MOSFETs / Bojoi, R.; Fusillo, F.; Raciti, A.; Musumeci, S; Scrimizzi, F.; Rizzo, S.. - ELETTRONICO. - (2018), pp. 1-7. ((Intervento presentato al convegno INTELEC, International Telecommunications Energy Conference tenutosi a Torino nel October 2018.
| Titolo: | Full-bridge DC-DC power converter for telecom applications with advanced trench gate MOSFETs | |
| Autori: | ||
| Data di pubblicazione: | 2018 | |
| Abstract: | This paper deals with the performance evaluation of enhanced MOSFET based on a trench gate layout... in full- bridge DC-DC power converter with synchronous rectifiers for telecom power supply applications. Outlines of the switches design needs both in the primary and secondary side of the insulated full-bridge converter are treated. In particular, the synchronous rectifier MOSFETs selection criteria are highlighted. Main focus of the paper is on minimization of devices power losses contribution in order to improve power converter efficiency. Furthermore, an extended characterization of the advanced MOSFET devices in static and dynamic conditions is carried out. | |
| ISBN: | 978-153865370-8 | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| INTELEC08612309.pdf | Articolo | 2a Post-print versione editoriale / Version of Record | Non Pubblico - Accesso privato/ristretto | Administrator Richiedi una copia |
http://hdl.handle.net/11583/2788142
Copyright © 2021