Archivio Istituzionale della RicercaWe report experimental evidence of coexistence between passive mode-locking (ML) solutions and laser off state in a monolithic two sections InAs/InGaAs Quantum Dot (QD) semiconductor laser. The considered device has a 0.4 mm long straight absorber and a 2.380 mm long active region characterized by a 2° full taper angle. The active side facet is as cleaved, while the absorber side facet is high reflection coated.
Experimental and theoretical evidences of hysteresis in passive mode-locked quantum dots lasers / Columbo, L.; Bardella, P.; Auth, D.; Weber, C.; Breuer, S.. - ELETTRONICO. - (2019), pp. 1-1. (Intervento presentato al convegno 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 tenutosi a Munich, Germany nel 23-27 June 2019) [10.1109/CLEOE-EQEC.2019.8871933].
Experimental and theoretical evidences of hysteresis in passive mode-locked quantum dots lasers
Columbo L.;Bardella P.;
2019
Abstract
We report experimental evidence of coexistence between passive mode-locking (ML) solutions and laser off state in a monolithic two sections InAs/InGaAs Quantum Dot (QD) semiconductor laser. The considered device has a 0.4 mm long straight absorber and a 2.380 mm long active region characterized by a 2° full taper angle. The active side facet is as cleaved, while the absorber side facet is high reflection coated.
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https://hdl.handle.net/11583/2767480