We introduce a novel generative model for stochastic device responses using limited available data. This model is oblivious to any varying design parameters or their distribution and only requires a small set of “training” responses. Using this model, new responses are efficiently generated whose distribution closely matches that of the real data, e.g., for use in Monte-Carlo-like analyses. The modeling methodology consists of a vector fitting step, where device responses are represented by a rational model, followed by the optimization of a Gaussian process latent variable model. Passivity is guaranteed by a posteriori discarding of nonpassive responses. The novel model is shown to considerably outperform a previous generative model, as evidenced by comparing accuracies of distribution estimation for the case of differential-to-common mode conversion in two coupled microstrip lines.
Generation of stochastic interconnect responses via Gaussian process latent variable models / De Ridder, S.; Deschrijver, D.; Manfredi, P.; Dhaene, T.; Ginste, D. V.. - In: IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY. - ISSN 0018-9375. - STAMPA. - 61:2(2019), pp. 582-585. [10.1109/TEMC.2018.2830104]
Generation of stochastic interconnect responses via Gaussian process latent variable models
Manfredi P.;
2019
Abstract
We introduce a novel generative model for stochastic device responses using limited available data. This model is oblivious to any varying design parameters or their distribution and only requires a small set of “training” responses. Using this model, new responses are efficiently generated whose distribution closely matches that of the real data, e.g., for use in Monte-Carlo-like analyses. The modeling methodology consists of a vector fitting step, where device responses are represented by a rational model, followed by the optimization of a Gaussian process latent variable model. Passivity is guaranteed by a posteriori discarding of nonpassive responses. The novel model is shown to considerably outperform a previous generative model, as evidenced by comparing accuracies of distribution estimation for the case of differential-to-common mode conversion in two coupled microstrip lines.File | Dimensione | Formato | |
---|---|---|---|
jnl-2019-TEMC-GP-LVM.pdf
accesso riservato
Tipologia:
2a Post-print versione editoriale / Version of Record
Licenza:
Non Pubblico - Accesso privato/ristretto
Dimensione
1.7 MB
Formato
Adobe PDF
|
1.7 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
jnl-2019-TEMC-letters.pdf
accesso aperto
Tipologia:
2. Post-print / Author's Accepted Manuscript
Licenza:
Pubblico - Tutti i diritti riservati
Dimensione
2.84 MB
Formato
Adobe PDF
|
2.84 MB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/2759721
Attenzione
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo