Archivio Istituzionale della RicercaThis paper presents a power-efficient Ultra Low Voltage (ULV) Digital-Based Operational Transconductance Amplifier (DB-OTA), which uses static logic gates and processes digitally the analog input signal. Post-layout simulations in 180nm CMOS technology show that at 300mV supply voltage the circuit consumes just 2nW while driving a capacitive load of 80pF with Total Harmonic Distortion lower than 5% at 100mV input signal swing. The total silicon area is 1,426 μm2. The maximum energy efficiency supply for the DB-OTA and its scalability to 40nm CMOS technology node are also demonstrated.
A 300mV-Supply, 2nW-Power, 80pF-Load CMOS Digital-Based OTA for IoT Interfaces / Pedro, Toledo; Crovetti, PAOLO STEFANO; Klimach, Hamilton; Bampi, Sergio. - STAMPA. - (2019). (Intervento presentato al convegno 26th IEEE International Conference on Electronics Circuits and Systems tenutosi a Genova (I) nel 27-29 November 2019) [10.1109/ICECS46596.2019.8965062].
A 300mV-Supply, 2nW-Power, 80pF-Load CMOS Digital-Based OTA for IoT Interfaces
Pedro Toledo;Paolo Crovetti;
2019
Abstract
This paper presents a power-efficient Ultra Low Voltage (ULV) Digital-Based Operational Transconductance Amplifier (DB-OTA), which uses static logic gates and processes digitally the analog input signal. Post-layout simulations in 180nm CMOS technology show that at 300mV supply voltage the circuit consumes just 2nW while driving a capacitive load of 80pF with Total Harmonic Distortion lower than 5% at 100mV input signal swing. The total silicon area is 1,426 μm2. The maximum energy efficiency supply for the DB-OTA and its scalability to 40nm CMOS technology node are also demonstrated.
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https://hdl.handle.net/11583/2758512
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