Comparison of 'shallow' and 'deep' junction architectures for MBE-grown InAs/GaAs quantum dot solar cells

We report on the fabrication of InAs/GaAs quantum dot solar cells with high open circuit voltage by molecular beam epitaxy. `Shallow' and `deep' junction architectures were compared. The highest open circuit voltage of 0.94 V was obtained for the `shallow' junction configuration. The open circuit voltage of InAs quantum dot solar cells decreased only by ~40 mV compared to GaAs reference cells for both junction architectures indicating high quality quantum dots. The open circuit voltage of InAs/GaAs quantum dot solar cells was also found to be dependent on the size of quantum dots.