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We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film configuration. Numerical simulations show that remarkably high increase of the QD photocurrent may be achieved by replacing the planar rear mirror with micro-structured photonic gratings. Measurements of diffraction efficiency of grating prototypes realized on GaAs wafers by nanoimprint lithography are presented.

Enabling high-efficiency InAs/GaAs Quantum Dot Solar Cells by Epitaxial Lift-Off and Light Management / Cappelluti, Federica; Cédola, A. P.; Khalili, A.; Elsehrawy, FARID KHALED MOHAMED FARID; Bauhuis, G.; Mulder, Peter; Schermer, John; Bissels, Günther; Aho, Timo; Niemi, Tapio; Guina, Mircea; Kim, D.; Wu, J.; Liu, H.. - ELETTRONICO. - (2019). (Intervento presentato al convegno IEEE 44th Photovoltaic Specialists Conference (PVSC) tenutosi a Washington DC nel June 2017).

Enabling high-efficiency InAs/GaAs Quantum Dot Solar Cells by Epitaxial Lift-Off and Light Management

Federica Cappelluti;A. P. Cédola;A. Khalili;Farid Elsehrawy;J. Wu;H. Liu
2019

Abstract

We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film configuration. Numerical simulations show that remarkably high increase of the QD photocurrent may be achieved by replacing the planar rear mirror with micro-structured photonic gratings. Measurements of diffraction efficiency of grating prototypes realized on GaAs wafers by nanoimprint lithography are presented.
2019
4.1 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2726878
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