In this work, the mechanism of differential-to-common-mode (CM) conversion arising in differential interconnects due to bend discontinuities is investigated. A circuit interpretation of the phenomenon is provided in terms of lumped sources of interference included into the equivalent CM circuit. The obtained circuit model, assessed through full-wave simulation, allows inferring analogies and differences with respect to other sources of CM generation such as asymmetries and non-uniformities of the line cross-section, possibly occurring due to the manufacturing process. It is shown that the bent section can be interpreted as a local perturbation of an ideally uniform and symmetric microstrip cross-section and, as such, included into a more general simulation framework based on a perturbative approach aimed at the CM prediction in differential interconnects.

Circuit interpretation and perturbative analysis of differential-to-common mode conversion due to bend discontinuities / Wu, Xinglong; Grassi, Flavia; Pignari, Sergio A.; Manfredi, Paolo; Vande Ginste, Dries. - ELETTRONICO. - (2017), pp. 1-3. (Intervento presentato al convegno 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS 2017) tenutosi a Haining, China nel 14-16 Dec. 2017) [10.1109/EDAPS.2017.8276966].

Circuit interpretation and perturbative analysis of differential-to-common mode conversion due to bend discontinuities

Paolo Manfredi;
2017

Abstract

In this work, the mechanism of differential-to-common-mode (CM) conversion arising in differential interconnects due to bend discontinuities is investigated. A circuit interpretation of the phenomenon is provided in terms of lumped sources of interference included into the equivalent CM circuit. The obtained circuit model, assessed through full-wave simulation, allows inferring analogies and differences with respect to other sources of CM generation such as asymmetries and non-uniformities of the line cross-section, possibly occurring due to the manufacturing process. It is shown that the bent section can be interpreted as a local perturbation of an ideally uniform and symmetric microstrip cross-section and, as such, included into a more general simulation framework based on a perturbative approach aimed at the CM prediction in differential interconnects.
2017
978-1-5386-1238-5
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2715312
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