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EnglishThe long-term reliability of power modules is a key factor for most of power electronics applications. Previous work was dedicated to the online monitoring of junction temperature of SiC power MOSFETs via on-state resistance measurement. Among several advantages, temperature monitoring avoids the components failure due to instantaneous thermal overstress. Moreover, as the on resistance tends to grow with the age of the component, temperature monitoring inherently behaves as a precursor of failure, because temperature will be overestimated progressively throughout the lifetime of the component. In this paper the systematic detection of aging of the power semiconductors is proposed, still using the direct measurement of the on-state resistance. A new joint methodology is proposed, based on the initial commissioning of the module both for temperature monitoring and aging evaluation. The identification and monitoring technique is tested on a SiC MOSFET power module.
Coordinated On-line Junction Temperature Estimation and Prognostic of SiC Power Modules / Stella, Fausto; Pellegrino, GIAN - MARIO LUIGI; Armando, ERIC GIACOMO. - ELETTRONICO. - (In corso di stampa). ((Intervento presentato al convegno IEEE Energy Conversion Congress and Exposition (ECCE 2018) tenutosi a Portland (USA) nel September 23 – 27, 2018.
| Titolo: | Coordinated On-line Junction Temperature Estimation and Prognostic of SiC Power Modules |
| Autori: | |
| Data di pubblicazione: | Being printed |
| Abstract: | The long-term reliability of power modules is a key factor for most of power electronics applica...tions. Previous work was dedicated to the online monitoring of junction temperature of SiC power MOSFETs via on-state resistance measurement. Among several advantages, temperature monitoring avoids the components failure due to instantaneous thermal overstress. Moreover, as the on resistance tends to grow with the age of the component, temperature monitoring inherently behaves as a precursor of failure, because temperature will be overestimated progressively throughout the lifetime of the component. In this paper the systematic detection of aging of the power semiconductors is proposed, still using the direct measurement of the on-state resistance. A new joint methodology is proposed, based on the initial commissioning of the module both for temperature monitoring and aging evaluation. The identification and monitoring technique is tested on a SiC MOSFET power module. |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| Fausto Stella ECCE 2018 final2.docx.pdf | Articolo principale | 2. Post-print / Author's Accepted Manuscript | PUBBLICO - Tutti i diritti riservati | Visibile a tuttiVisualizza/Apri |
http://hdl.handle.net/11583/2713892
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