It has already been reported that 1/f noise in graphene can be dominated by fluctuations of charge carrier mobility. We show here that the increasing damage induced by oxygen plasma on graphene samples result in two trends: at low doses, the magnitude of the 1/f noise increases with the dose; and at high doses, it decreases with the dose. This behaviour is interpreted in the framework of 1/f noise generated by carrier mobility fluctuations where the concentration of mobility fluctuation centers and the mean free path of the carriers are competing factors.

Role of plasma-induced defects in the generation of 1/f noise in graphene / Cultrera, Alessandro; Callegaro, Luca; Marzano, Martina; Ortolano, Massimo; Amato, Giampiero. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 112:9(2018). [10.1063/1.5024218]

Role of plasma-induced defects in the generation of 1/f noise in graphene

Marzano, Martina;Ortolano, Massimo;Amato, Giampiero
2018

Abstract

It has already been reported that 1/f noise in graphene can be dominated by fluctuations of charge carrier mobility. We show here that the increasing damage induced by oxygen plasma on graphene samples result in two trends: at low doses, the magnitude of the 1/f noise increases with the dose; and at high doses, it decreases with the dose. This behaviour is interpreted in the framework of 1/f noise generated by carrier mobility fluctuations where the concentration of mobility fluctuation centers and the mean free path of the carriers are competing factors.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2702530
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