Direct CVD Growth of Monolayer Graphene on Exfoliated BN on SiO2

Graphene on BN exhibits exceptionally high charge carrier mobility, which makes it promising for future device applications. However, current CVD methods of growing graphene on a catalytic metal surface require a chemical transfer process onto BN substrate, which introduces polymers and etchants that can contaminate the surface of pristine graphene. Here, we present a method for directly growing graphene on BN, a non-catalytic surface. This method not only eliminates the undesirable transfer process, but also successfully grows clean graphene with well-defined edges. We performed Raman spectroscopy and atomic force microscopy, which showed a high coverage of monolayer graphene with low D peak and single hexagonal graphene domains of sub-micron size.