Graphene on BN exhibits exceptionally high charge carrier mobility, which makes it promising for future device applications. However, current CVD methods of growing graphene on a catalytic metal surface require a chemical transfer process onto BN substrate, which introduces polymers and etchants that can contaminate the surface of pristine graphene. Here, we present a method for directly growing graphene on BN, a non-catalytic surface. This method not only eliminates the undesirable transfer process, but also successfully grows clean graphene with well-defined edges. We performed Raman spectroscopy and atomic force microscopy, which showed a high coverage of monolayer graphene with low D peak and single hexagonal graphene domains of sub-micron size.

Direct CVD Growth of Monolayer Graphene on Exfoliated BN on SiO2 / Jung, Han Sae; Tsai, Hsin Zon; Piatti, Erik; Meaker, Kacey; Velasco, Jairo; Zettl, Alex; Crommie, Michael; Zettl, Group Collaboration; Crommie, Group Team. - ELETTRONICO. - 1:(2014), pp. 1061-1061. (Intervento presentato al convegno APS March Meeting 2014 tenutosi a Denver, Colorado, United States of America nel 3-7 March 2014).

Direct CVD Growth of Monolayer Graphene on Exfoliated BN on SiO2

PIATTI, ERIK;
2014

Abstract

Graphene on BN exhibits exceptionally high charge carrier mobility, which makes it promising for future device applications. However, current CVD methods of growing graphene on a catalytic metal surface require a chemical transfer process onto BN substrate, which introduces polymers and etchants that can contaminate the surface of pristine graphene. Here, we present a method for directly growing graphene on BN, a non-catalytic surface. This method not only eliminates the undesirable transfer process, but also successfully grows clean graphene with well-defined edges. We performed Raman spectroscopy and atomic force microscopy, which showed a high coverage of monolayer graphene with low D peak and single hexagonal graphene domains of sub-micron size.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2661598
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