Resistive switching phenomena are of paramount importance in the area of memory devices. In the present study, we have fabricated a simple resistive switching device using a solution processable nanocomposite based on silver nitrate and poly(vinylidene fluoride-hexafluoropropylene). The change in resistance is ascribed to an initial ionic conduction, followed by a non-continuous field induced filament formation. The switching device fabricated with the above-mentioned active matrix displayed a volatile switching behavior. The addition of room temperature ionic liquid plays a fundamental role in triggering permanent memory and reducing the set voltage range up to ten-fold. The change in switching behavior with respect to the applied voltage bias and compliance level set during electrical characterization was studied thoroughly. The present work also gives a glimpse into the importance of device architecture on resistive switching phenomena.

Ionic liquid-enhanced soft resistive switching devices / KRISHNA RAJAN, KRISHNA RAJAN; Chiappone, Annalisa; Perrone, Denis; Bocchini, Sergio; Roppolo, Ignazio; Bejtka, Katarzyna; Castellino, Micaela; Pirri, Candido; Ricciardi, Carlo; Chiolerio, Alessandro. - In: RSC ADVANCES. - ISSN 2046-2069. - ELETTRONICO. - 6:96(2016), pp. 94128-94138. [10.1039/C6RA18668H]

Ionic liquid-enhanced soft resistive switching devices

KRISHNA RAJAN, KRISHNA RAJAN;CHIAPPONE, ANNALISA;PERRONE, DENIS;BOCCHINI, SERGIO;ROPPOLO, IGNAZIO;CASTELLINO, MICAELA;PIRRI, Candido;RICCIARDI, Carlo;CHIOLERIO, ALESSANDRO
2016

Abstract

Resistive switching phenomena are of paramount importance in the area of memory devices. In the present study, we have fabricated a simple resistive switching device using a solution processable nanocomposite based on silver nitrate and poly(vinylidene fluoride-hexafluoropropylene). The change in resistance is ascribed to an initial ionic conduction, followed by a non-continuous field induced filament formation. The switching device fabricated with the above-mentioned active matrix displayed a volatile switching behavior. The addition of room temperature ionic liquid plays a fundamental role in triggering permanent memory and reducing the set voltage range up to ten-fold. The change in switching behavior with respect to the applied voltage bias and compliance level set during electrical characterization was studied thoroughly. The present work also gives a glimpse into the importance of device architecture on resistive switching phenomena.
2016
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2651847
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