NanoMagnet Logic (NML) is an emerging technol- ogy that allows to design digital circuits using nanomagnets. Each magnet has only two possible states and encodes digital informa- tion without the need for currents or voltages. This behavior differentiates NML circuits from charge based technologies. The advantages provided by NML circuits are a possible very low power consumption, and the ability to mix logic and memory in the same device. While a rich experimental activity on NML circuits can be found in literature, the feasibility of a complete NML system remains to be demonstrated yet. In this work we explore the possibility of implementing NML logic circuits based on the physical structure of Magnetic RAM (M-RAM). The advantages are twofold: First, M-RAM is a well developed technology, ready for the commercial stage, second it intrinsically provides an interface toward the CMOS world. To demonstrate the feasibility of NML circuits based on M-RAM we have designed a 3-input Ex-OR gate, using two different physical layouts for control signals. The first solution is strictly based on the M-RAM structure; the second solution requires a more complex fabrication process but leads to a smaller area. Circuits are simulated using VHDL language, with the aid of a tool that we have developed which automatically generates the VHDL code starting from the circuit layout. Overall, the solution here presented is a considerable step-forward toward the development of a complete magnetic circuit.

Design of NML Circuits based on M-RAM / Bollo, Matteo; Turvani, Giovanna; Zamboni, Maurizio; Das, J.; Bhanja, S; Graziano, Mariagrazia. - ELETTRONICO. - (2015), pp. 1-4. (Intervento presentato al convegno IEEE Nano tenutosi a Roma nel July 2015) [10.1109/NANO.2015.7388882].

Design of NML Circuits based on M-RAM

BOLLO, MATTEO;TURVANI, GIOVANNA;ZAMBONI, Maurizio;GRAZIANO, MARIAGRAZIA
2015

Abstract

NanoMagnet Logic (NML) is an emerging technol- ogy that allows to design digital circuits using nanomagnets. Each magnet has only two possible states and encodes digital informa- tion without the need for currents or voltages. This behavior differentiates NML circuits from charge based technologies. The advantages provided by NML circuits are a possible very low power consumption, and the ability to mix logic and memory in the same device. While a rich experimental activity on NML circuits can be found in literature, the feasibility of a complete NML system remains to be demonstrated yet. In this work we explore the possibility of implementing NML logic circuits based on the physical structure of Magnetic RAM (M-RAM). The advantages are twofold: First, M-RAM is a well developed technology, ready for the commercial stage, second it intrinsically provides an interface toward the CMOS world. To demonstrate the feasibility of NML circuits based on M-RAM we have designed a 3-input Ex-OR gate, using two different physical layouts for control signals. The first solution is strictly based on the M-RAM structure; the second solution requires a more complex fabrication process but leads to a smaller area. Circuits are simulated using VHDL language, with the aid of a tool that we have developed which automatically generates the VHDL code starting from the circuit layout. Overall, the solution here presented is a considerable step-forward toward the development of a complete magnetic circuit.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2616682
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