Archivio Istituzionale della RicercaThe mode reflectivity of narrow stripe double heterostructure semiconductor laser is evaluated using a simplified approach. It is based on a mode matching technique in the Fourier Transform domain for a suitable equivalent structure. The method allows to compute the reflectivity by the evaluation of an integral in the spectral domain and to obtain a closed form anlytical expression for the radiation pattern.
Simple Model for Semiconductor Laser End Facet Reflectivity / G. P., Bava; Bianco, Andrea; Montrosset, Ivo. - STAMPA. - (1987), pp. 1029-1032. (Intervento presentato al convegno 17th European Solid State Device Research Conference, 1987. tenutosi a Bologna, Italy nel September 1987).
Simple Model for Semiconductor Laser End Facet Reflectivity
BIANCO, ANDREA;MONTROSSET, Ivo
1987
Abstract
The mode reflectivity of narrow stripe double heterostructure semiconductor laser is evaluated using a simplified approach. It is based on a mode matching technique in the Fourier Transform domain for a suitable equivalent structure. The method allows to compute the reflectivity by the evaluation of an integral in the spectral domain and to obtain a closed form anlytical expression for the radiation pattern.
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https://hdl.handle.net/11583/2606216
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