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EnglishA theoretical study of the electrical performance of p-on-n GaAs sub-cells under AM0, irradiated with 1 MeV electrons, has been carried out by means of computer simulation. Effects of both base and emitter carrier concentration upon radiation resistance of these devices have been researched. From analysis it is possible to determine the highest electron fluence to which the electrical parameters of the solar cell, with well-known base and emitter carrier concentrations, are reduced simultaneously in less than 20% from their non-irradiated values. Results presented in this paper are important in order to contribute to the design of radiation-hardened devices.
Study of the electrical performance of n-GaAs sub-cells in InGaP/GaAs/Ge 3J solar cells under 1 MeV electron irradiation using computer simulation / Cappelletti M.; Casas G.; Cedola A.; Peltzer y Blancá E.. - (2014), pp. 163-164. ((Intervento presentato al convegno 14th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) 2014 tenutosi a Palma de Mallorca, Spain [10.1109/NUSOD.2014.6935407].
| Titolo: | Study of the electrical performance of n-GaAs sub-cells in InGaP/GaAs/Ge 3J solar cells under 1 MeV electron irradiation using computer simulation | |
| Autori: | ||
| Data di pubblicazione: | 2014 | |
| Abstract: | A theoretical study of the electrical performance of p-on-n GaAs sub-cells under AM0, irradiated ...with 1 MeV electrons, has been carried out by means of computer simulation. Effects of both base and emitter carrier concentration upon radiation resistance of these devices have been researched. From analysis it is possible to determine the highest electron fluence to which the electrical parameters of the solar cell, with well-known base and emitter carrier concentrations, are reduced simultaneously in less than 20% from their non-irradiated values. Results presented in this paper are important in order to contribute to the design of radiation-hardened devices. | |
| ISBN: | 9781479936816 9781479936823 | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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http://hdl.handle.net/11583/2604777
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