Starting from a density-matrix treatment of carrierphonon interaction based on a recent reformulation of the Markov limit, we provide a detailed investigation of phononinduced quantum diffusion in semiconductor nanostructures. In particular, as for the case of carrier-carrier relaxation in photoexcited semiconductors, our analysis shows the failure of simplified dephasing models in describing phonon-induced scattering nonlocality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.

Phonon-induced quantum diffusion in semiconductors2014 International Workshop on Computational Electronics (IWCE) / Rosati, Roberto; Rossi, Fausto. - ELETTRONICO. - (2014), pp. 1-4. (Intervento presentato al convegno 2014 International Workshop on Computational Electronics (IWCE)) [10.1109/IWCE.2014.6865847].

Phonon-induced quantum diffusion in semiconductors2014 International Workshop on Computational Electronics (IWCE)

ROSATI, ROBERTO;ROSSI, FAUSTO
2014

Abstract

Starting from a density-matrix treatment of carrierphonon interaction based on a recent reformulation of the Markov limit, we provide a detailed investigation of phononinduced quantum diffusion in semiconductor nanostructures. In particular, as for the case of carrier-carrier relaxation in photoexcited semiconductors, our analysis shows the failure of simplified dephasing models in describing phonon-induced scattering nonlocality, pointing out that such limitation is particularly severe for the case of quasielastic dissipation processes.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2581146
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