Damage, micro-cracks, grain boundaries and other defects in solar cells are impacting on the electric power-loss of photovoltaic modules, their actual solar conversion efficiency and also their lifetime. In the present contribution, a one-dimensional model for simulating the electric current distribution in solar cells accounting for a distributed series resistance is generalized to the presence of partially conductive cracks. The proposed model is used to perform a quantitative analysis of electroluminescence (EL) images of cracked monocrystalline silicon solar cells. A further generalization in a stochastic direction is also proposed in order to take into account randomly distributed defects typical of polycrystalline silicon.

A generalized electric model for mono and polycrystalline silicon in the presence of cracks and random defects / Berardone, Irene; Corrado, Mauro; Paggi, M.. - In: ENERGY PROCEDIA. - ISSN 1876-6102. - STAMPA. - 55:(2014), pp. 22-29. ((Intervento presentato al convegno 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014) tenutosi a s'-Hertogenbosch, The Netherlands nel March 25-27, 2014 [10.1016/j.egypro.2014.08.005].

A generalized electric model for mono and polycrystalline silicon in the presence of cracks and random defects

BERARDONE, IRENE;CORRADO, MAURO;
2014

Abstract

Damage, micro-cracks, grain boundaries and other defects in solar cells are impacting on the electric power-loss of photovoltaic modules, their actual solar conversion efficiency and also their lifetime. In the present contribution, a one-dimensional model for simulating the electric current distribution in solar cells accounting for a distributed series resistance is generalized to the presence of partially conductive cracks. The proposed model is used to perform a quantitative analysis of electroluminescence (EL) images of cracked monocrystalline silicon solar cells. A further generalization in a stochastic direction is also proposed in order to take into account randomly distributed defects typical of polycrystalline silicon.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/2571141
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