Forward I-V characteristics of a silicon carbide Schottky diode, with triple layer metallization Ni/Ti/Al as Schottky contact, are presented. Effects of different annealing conditions on the Schottky barrier height and ideality factor are discussed. The diodes were annealed in inert Ar atmosphere for 30 minutes at temperatures ranging from 600 °C to 800 °C. The ideality factors of the four diodes, chosen out of 20 diodes, range from 1.02 to 1.13 and the Schottky barrier heights range from 1.47 eV to 3.17 eV.

Fabrication of Ni/Ti/Al Schottky contact to n-type 4H-SiC under various annealing conditions / Zaman, MUHAMMAD YOUSUF; Ferrero, Sergio; Perrone, Denis; Scaltrito, Luciano; Shahzad, Nadia; Pugliese, Diego. - In: JOURNAL OF PHYSICS. CONFERENCE SERIES. - ISSN 1742-6588. - 439:(2013). [10.1088/1742-6596/439/1/012027]

Fabrication of Ni/Ti/Al Schottky contact to n-type 4H-SiC under various annealing conditions

ZAMAN, MUHAMMAD YOUSUF;FERRERO, SERGIO;PERRONE, DENIS;SCALTRITO, LUCIANO;SHAHZAD, NADIA;PUGLIESE, DIEGO
2013

Abstract

Forward I-V characteristics of a silicon carbide Schottky diode, with triple layer metallization Ni/Ti/Al as Schottky contact, are presented. Effects of different annealing conditions on the Schottky barrier height and ideality factor are discussed. The diodes were annealed in inert Ar atmosphere for 30 minutes at temperatures ranging from 600 °C to 800 °C. The ideality factors of the four diodes, chosen out of 20 diodes, range from 1.02 to 1.13 and the Schottky barrier heights range from 1.47 eV to 3.17 eV.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/2512675
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