Modeling of open quantum devices within the closed-system paradigm

We present an alternative simulation strategy for the study of nonequilibrium carrier dynamics in quantum devices with open boundaries. We propose to replace the usual modeling of open quantum systems based on phenomenological injection/loss rates with a kinetic description of the system-reservoir thermalization process. In this simulation scheme the partial carrier thermalization induced by the device spatial boundaries is treated within the standard Boltzmann-transport approach via an effective scattering mechanism between the highly nonthermal device electrons and the thermal carrier distribution of the reservoir. Applications to state-of-the-art semiconductor nanostructures are discussed. Finally, the proposed approach is extended to the quantum-transport regime; to this end, we introduce an effective Liouville superoperator, able to describe the effect of the device spatial boundaries on the time evolution of the single-particle density matrix.