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EnglishIn this paper, state-of-the-art research on two-state passive mode-locking of InAs/(In)GaAs quantum dot lasers is reviewed with a focus on the influence of extended absorber biasing conditions on the two quantized emission-states of a strongly inhomogeneously broadened quantum dot laser. We start with the recently demonstrated state-selectivity of ground-state, joint ground- and excited-state and then sole excited-state emission by a resistor Self-Electro-Optical Effect configuration. This regime is then extended towards the reverse-bias regime giving access to both excited-state and joint ground- and excited-state emission and to higher laser output power. Finally, we find an excellent accordance of the emission-states at the boundary of the two regimes. The occurrence and evolution of the emission-states in dependence on the biasing conditions are explained qualitatively.
Extended ground-state and excited-state emission-state control in a mode-locked two-section quantum dot laser / Breuer S.; Rossetti M.; Drzewietzki L.; Bardella P.; Montrosset I.; Hopkinson M.; Wolfgang Elsasser W.. - STAMPA. - (2011). ((Intervento presentato al convegno Transparent Optical Networks (ICTON), 2011 13th International Conference on tenutosi a Stockholm nel 26-30 June 2011 [10.1109/ICTON.2011.5970825].
| Titolo: | Extended ground-state and excited-state emission-state control in a mode-locked two-section quantum dot laser | |
| Autori: | ||
| Data di pubblicazione: | 2011 | |
| Abstract: | In this paper, state-of-the-art research on two-state passive mode-locking of InAs/(In)GaAs quant...um dot lasers is reviewed with a focus on the influence of extended absorber biasing conditions on the two quantized emission-states of a strongly inhomogeneously broadened quantum dot laser. We start with the recently demonstrated state-selectivity of ground-state, joint ground- and excited-state and then sole excited-state emission by a resistor Self-Electro-Optical Effect configuration. This regime is then extended towards the reverse-bias regime giving access to both excited-state and joint ground- and excited-state emission and to higher laser output power. Finally, we find an excellent accordance of the emission-states at the boundary of the two regimes. The occurrence and evolution of the emission-states in dependence on the biasing conditions are explained qualitatively. | |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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http://hdl.handle.net/11583/2498823
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