Archivio Istituzionale della RicercaWe describe an analytical method to calculate the strain field and the corresponding band gap modulation induced in a quantum well by a surface stressor of arbitrary shape. In this way, it is possible to engineer the confinement potential of different strained nanostructures based on patterned heterojunctions. Band gap modulations up to 130–140 meV are predicted for suitably designed II–VI/III–V and III–V/III–V heterostructures.
Engineering the strain field for the control of quantum confinement: An analytical model for arbitrary shape nanostructures / Mazzer, M.; De Giorgi, M.; Cingolani, R.; Porello, G.; Rossi, Fausto; Molinari, E.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 84:7(1998), pp. 3437-3441. [10.1063/1.368517]
Engineering the strain field for the control of quantum confinement: An analytical model for arbitrary shape nanostructures
ROSSI, FAUSTO;
1998
Abstract
We describe an analytical method to calculate the strain field and the corresponding band gap modulation induced in a quantum well by a surface stressor of arbitrary shape. In this way, it is possible to engineer the confinement potential of different strained nanostructures based on patterned heterojunctions. Band gap modulations up to 130–140 meV are predicted for suitably designed II–VI/III–V and III–V/III–V heterostructures.
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https://hdl.handle.net/11583/2498484
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