An automatic test set which performs a real time harmonic load-pull characterization is proposed. An active load technique is used in order to set the load at the test frequency and its harmonics and a complete set of device parameters useful for power amplifier design purposes can be measured versus the harmonic loads. The calibration procedure, based on substrate and coaxial standards, has been mainly developed for on wafer measurement in order to set the reference planes directly on the DUT.
Large signal 2nd harmonic on wafer MESFET characterization / A. Ferrero; U. Pisani. - STAMPA. - 18(1990), pp. 101-106. ((Intervento presentato al convegno ARFTG Conference tenutosi a Monterey, CA (USA) nel Nov. 1990 [10.1109/ARFTG.1990.324001].
Titolo: | Large signal 2nd harmonic on wafer MESFET characterization | |
Autori: | ||
Data di pubblicazione: | 1990 | |
Abstract: | An automatic test set which performs a real time harmonic load-pull characterization is proposed.... An active load technique is used in order to set the load at the test frequency and its harmonics and a complete set of device parameters useful for power amplifier design purposes can be measured versus the harmonic loads. The calibration procedure, based on substrate and coaxial standards, has been mainly developed for on wafer measurement in order to set the reference planes directly on the DUT. | |
ISBN: | 0780356861 | |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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http://hdl.handle.net/11583/2497884