Archivio Istituzionale della RicercaThis paper deals with the susceptibility to electromagnetic interference (EMI) of circuits used in smart power integrated circuits to sense the current of power transistors. The susceptibility of a conventional current sensor based on the mirroring principle is first investigated. Then a new circuit that avoids the electrical connection of the current sensor to the power transistor drain terminal is proposed. The susceptibility of the above mentioned current sensors is discussed and evaluated by means of time-domain computer simulations.
A New Current Sensor Based on the Miller Effect Highly Immune to EMI / Aiello, Orazio; Fiori, Franco. - STAMPA. - 1:(2012), pp. 69-72. (Intervento presentato al convegno Asia-Pacific International symposium on electromagnetic compatibility tenutosi a Singapore nel May 2012) [10.1109/APEMC.2012.6238001].
A New Current Sensor Based on the Miller Effect Highly Immune to EMI
AIELLO, ORAZIO;FIORI, Franco
2012
Abstract
This paper deals with the susceptibility to electromagnetic interference (EMI) of circuits used in smart power integrated circuits to sense the current of power transistors. The susceptibility of a conventional current sensor based on the mirroring principle is first investigated. Then a new circuit that avoids the electrical connection of the current sensor to the power transistor drain terminal is proposed. The susceptibility of the above mentioned current sensors is discussed and evaluated by means of time-domain computer simulations.
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https://hdl.handle.net/11583/2497424
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