Archivio Istituzionale della RicercaEffect on the electromagnetic bandgap (EBG) of an active, tunable, EBG structure, due to the insertion loss and other scattering parameters of active switching devices, is investigated. Active FET switches are modeled two ways, first as perfect conductors with the switch packaging and secondly as a black box with embedded scattering parameters provided by the switch manufacturer. The results obtained from the simulations for the transmission characteristics of the EBG structure shows a significant downshift in the resultant electromagnetic bandgap due to the additional transmission line effects introduced by the switches. © 2011 IEEE.
Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band / D. N. P., Thalakotuna; Matekovits, Ladislau; K., Esselle; M., Heimlich. - ELETTRONICO. - (2011), pp. 1808-1811. (Intervento presentato al convegno Antennas and Propagation (APSURSI), 2011 IEEE International Symposium on tenutosi a Spokane, WA nel 2011) [10.1109/APS.2011.5996847].
Effect of active device insertion losses on the electromagnetic bandgap characteristics of a tunable 1D periodic structure in the S band
MATEKOVITS, Ladislau;
2011
Abstract
Effect on the electromagnetic bandgap (EBG) of an active, tunable, EBG structure, due to the insertion loss and other scattering parameters of active switching devices, is investigated. Active FET switches are modeled two ways, first as perfect conductors with the switch packaging and secondly as a black box with embedded scattering parameters provided by the switch manufacturer. The results obtained from the simulations for the transmission characteristics of the EBG structure shows a significant downshift in the resultant electromagnetic bandgap due to the additional transmission line effects introduced by the switches. © 2011 IEEE.
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https://hdl.handle.net/11583/2480397
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