Archivio Istituzionale della RicercaWide-band matching of a tunable 1D periodic microwave structure, designed for fabrication in GaAs technology, is investigated. The two-layer unit cell of the periodic structure consists of a microstrip line loaded by multiple rectangular patches, which can be selectively short-circuited. The wide variation of the position of the bandgap, obtained by electrically controlled switches, induces a large variation of the effective dielectric constant in the considered wide frequency range. This effect is further reflected as a significant variation of the characteristic impedance, and hence a potentially high mismatch loss. A method for wide-band minimization of the mismatch (with respect to a 50ω reference impedance), without compromising the performance of the device, is presented. © 2011 IEEE.
Wide-band matching of a tunable periodic structure in GaAs technology / Matekovits, Ladislau; D. N. P., Thalakotuna; M., Heimlich; K. P., Esselle. - STAMPA. - (2011), pp. 376-379. (Intervento presentato al convegno 7th 2011 IEEE International Workshop on Antenna Technology: Small Antennas, Novel Structures and Innovative Metamaterials (IWAT2011) tenutosi a Hong Kong nel 2011) [10.1109/IWAT.2011.5752370].
Wide-band matching of a tunable periodic structure in GaAs technology
MATEKOVITS, Ladislau;
2011
Abstract
Wide-band matching of a tunable 1D periodic microwave structure, designed for fabrication in GaAs technology, is investigated. The two-layer unit cell of the periodic structure consists of a microstrip line loaded by multiple rectangular patches, which can be selectively short-circuited. The wide variation of the position of the bandgap, obtained by electrically controlled switches, induces a large variation of the effective dielectric constant in the considered wide frequency range. This effect is further reflected as a significant variation of the characteristic impedance, and hence a potentially high mismatch loss. A method for wide-band minimization of the mismatch (with respect to a 50ω reference impedance), without compromising the performance of the device, is presented. © 2011 IEEE.
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https://hdl.handle.net/11583/2480389
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