The stimulated ignition of latchup effects caused by external radiation has so far proven to be a hidden hazard. Here this effect is described as a novel approach to detect particles by means of a solid-state device susceptible to latchup effects. In addition, the device can also be used as a circuit for reading sensors’ signals, leaving the capability of sensing to external sensors. As the MOS transistors are widely used at present in microelectronics devices and sensors, this latchup-based cell is proposed as a novel structure for future applications in particle detection, amplification of sensors’ signals and radiation monitoring.
Exploiting a Latchup Circuit via Commercial CMOS Technologies / Gabrielli, A; Demarchi, Danilo; Villani, G.. - ELETTRONICO. - 1:(2009), pp. 1198-1201. (Intervento presentato al convegno 2009 IEEE Nuclear Science Symposium and Medical Imaging Conference tenutosi a Orlando, FL, USA nel 25-31 October 2009).
Exploiting a Latchup Circuit via Commercial CMOS Technologies
DEMARCHI, DANILO;
2009
Abstract
The stimulated ignition of latchup effects caused by external radiation has so far proven to be a hidden hazard. Here this effect is described as a novel approach to detect particles by means of a solid-state device susceptible to latchup effects. In addition, the device can also be used as a circuit for reading sensors’ signals, leaving the capability of sensing to external sensors. As the MOS transistors are widely used at present in microelectronics devices and sensors, this latchup-based cell is proposed as a novel structure for future applications in particle detection, amplification of sensors’ signals and radiation monitoring.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/2262552
Attenzione
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo