In the present work it is reported a study on ZnO:Al deposited by RF magnetron sputtering of Zn and Al cathodes, or ZnO and Al cathodes in Ar+O2 and Ar atmosphere respectively. In order to obtain high band-gap films transparent in the 300 - 1000 nm wavelength region and highly electrical conductive films, an optimization of the deposition parameters has been performed by the Robust Design Method. ZnO:Al films, with an average transmittance above 85% for about 5000 angstroms thickness and a resistivity of 2 10-3 (Omega) cm have been grown.
Development of transparent conductive ZnO by RF magnetron sputtering / F. DEMICHELIS; C.F. PIRRI; E. TRESSO. - In: PROCEEDINGS - SPIE. - ISSN 1018-4732. - 2253(1994), pp. 103-113. [10.1117/12.192077]
|Titolo:||Development of transparent conductive ZnO by RF magnetron sputtering|
|Data di pubblicazione:||1994|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1117/12.192077|
|Appare nelle tipologie:||1.1 Articolo in rivista|
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