We present a new simulation strategy to study the non-equilibrium carrier dynamics in quantum devices with open boundaries. We propose a kinetic description of the system-reservoir thermalization process: the partial carrier thermalization induced by the device spatial boundaries is treated within the standard Boltzmann-transport approach via an effective scattering mechanism between the highly non-thermal device electrons and the thermal carrier distribution of the reservoir.

Modelling of open quantum devices within the closed-system paradigm / PROIETTI ZACCARIA, R.; Iotti, Rita Claudia; Rossi, Fausto. - STAMPA. - 772:(2005), pp. 1469-1470. (Intervento presentato al convegno 27th International Conference on the Physics of Semiconductors, ICPS-27 tenutosi a Flagstaff nel 26-07-2004 to 30-07-2004) [10.1063/1.1994670].

Modelling of open quantum devices within the closed-system paradigm

IOTTI, Rita Claudia;ROSSI, FAUSTO
2005

Abstract

We present a new simulation strategy to study the non-equilibrium carrier dynamics in quantum devices with open boundaries. We propose a kinetic description of the system-reservoir thermalization process: the partial carrier thermalization induced by the device spatial boundaries is treated within the standard Boltzmann-transport approach via an effective scattering mechanism between the highly non-thermal device electrons and the thermal carrier distribution of the reservoir.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1537028
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