Archivio Istituzionale della RicercaIn this paper, the nonlinear effects which are induced by radio-frequency interference (RFI) in switched capacitor (SC) circuits are investigated. In particular, high frequency distortion mechanisms in MOS switches are highlighted and predicted by a new analytical model. Such a model is employed in order to evaluate RFI-induced errors in a complex SC circuit and model predictions are compared with the results of time domain computer simulations.
Nonlinear effects of RF interference in SC circuits / Crovetti, Paolo Stefano; Fiori, Franco. - 2:(2005), pp. 39-42. (Intervento presentato al convegno 17th European Conference on Circuit Theory and Design tenutosi a Cork (IRL) nel 28 Aug.-2 Sept. 2005) [10.1109/ECCTD.2005.1522987].
Nonlinear effects of RF interference in SC circuits
CROVETTI, Paolo Stefano;FIORI, Franco
2005
Abstract
In this paper, the nonlinear effects which are induced by radio-frequency interference (RFI) in switched capacitor (SC) circuits are investigated. In particular, high frequency distortion mechanisms in MOS switches are highlighted and predicted by a new analytical model. Such a model is employed in order to evaluate RFI-induced errors in a complex SC circuit and model predictions are compared with the results of time domain computer simulations.
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https://hdl.handle.net/11583/1513600
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