The usual susceptibility test performed to check an ICs hardness to conducted and radiated radiofrequency (RF) interference does not seem to be useful when studying IC subcircuit input ports. Susceptibility measurements carried out directly on the chip surface are mandatory. The work has been aimed at the development of a susceptibility test bench designed on the basis of the “PIN injection method”, in order to carry out “on chip” measurements by using the electron beam testing (EBT) probe station system. Measurements have been performed in the input pad of a VLSI circuit (CMOS (0.7 μm)) for interference with carrier frequency in the range 20 MHz-1 GHz and available power level up to 15 dBm.

Investigation on VLSIs' input ports susceptibility to conducted RF interference / Fiori, Franco; Benelli, S.; Gaidano, G.; Pozzolo, Vincenzo. - (1997), pp. 326-329. ((Intervento presentato al convegno IEEE International Symposium on Electromagnetic Compatibility tenutosi a Austin, TX (USA) nel 18-22 Aug 1997 [10.1109/ISEMC.1997.667697].

Investigation on VLSIs' input ports susceptibility to conducted RF interference

FIORI, Franco;POZZOLO, Vincenzo
1997

Abstract

The usual susceptibility test performed to check an ICs hardness to conducted and radiated radiofrequency (RF) interference does not seem to be useful when studying IC subcircuit input ports. Susceptibility measurements carried out directly on the chip surface are mandatory. The work has been aimed at the development of a susceptibility test bench designed on the basis of the “PIN injection method”, in order to carry out “on chip” measurements by using the electron beam testing (EBT) probe station system. Measurements have been performed in the input pad of a VLSI circuit (CMOS (0.7 μm)) for interference with carrier frequency in the range 20 MHz-1 GHz and available power level up to 15 dBm.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11583/1411563
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