A review of semiconductor-based schemes for the realization of quantum information processing devices is presented. After recalling the fundamentals of quantum information/computation theory, we shall discuss potential implementation schemes based on charge and/or spin degrees of freedom in semiconductor nanostructures. More specifically, we shall present an all-optical implementation scheme of quantum information processing with semiconductor macroatoms/molecules, where the computational degrees of freedom are interband optical transitions (excitonic states) manipulated/controlled by ultrafast sequences of multicolor laser pulses. We shall primarily focus on implementation schemes dealing with charge excitations in GaAs as well as GaN quasi-zero-dimensional structures. We shall finally discuss the possibility to combine charge and spin degrees of freedom, thus allowing for fast quantum gates which do not translate into fast decoherence times.
The Excitonic Quantum Computer / D'Amico, I.; DE RINALDIS, S.; Biolatti, Eliana; Pazy, E.; Iotti, Rita Claudia; Rossi, Fausto. - In: PHYSICA STATUS SOLIDI B-BASIC RESEARCH. - ISSN 0370-1972. - STAMPA. - 234:1(2002), pp. 58-69. [10.1002/1521-3951(200211)234:1<58::AID-PSSB58>3.0.CO;2-G]
The Excitonic Quantum Computer
BIOLATTI, Eliana;IOTTI, Rita Claudia;ROSSI, FAUSTO
2002
Abstract
A review of semiconductor-based schemes for the realization of quantum information processing devices is presented. After recalling the fundamentals of quantum information/computation theory, we shall discuss potential implementation schemes based on charge and/or spin degrees of freedom in semiconductor nanostructures. More specifically, we shall present an all-optical implementation scheme of quantum information processing with semiconductor macroatoms/molecules, where the computational degrees of freedom are interband optical transitions (excitonic states) manipulated/controlled by ultrafast sequences of multicolor laser pulses. We shall primarily focus on implementation schemes dealing with charge excitations in GaAs as well as GaN quasi-zero-dimensional structures. We shall finally discuss the possibility to combine charge and spin degrees of freedom, thus allowing for fast quantum gates which do not translate into fast decoherence times.Pubblicazioni consigliate
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https://hdl.handle.net/11583/1405252
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