Archivio Istituzionale della RicercaUV detectors based on a-Si:H/a-SiC:H were deposited by plasma enhanced chemical vapor deposition and characterized in terms of their photoelectrical properties. A quantum efficiency of 90%, corresponding to 0.28 A/W, at 365 nm was measured for devices having p-layer and i-layer thickness less than 10 nm. A good uniformity (15%) was achieved on area of 5×5 cm. A linear dependence of the photocurrent as a function of impinging photon flux, corresponding to a constant responsivity, was found. Aging experiments were performed by UV irradiation both on devices and on thin films inserted in the detectors with the aim of investigating the possible correlations.
Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector / Mandracci, Pietro; M. L., Rastello; P., Rava; F., Giuliani; Giorgis, Fabrizio. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 337:1-2(1999), pp. 232-234. [10.1016/S0040-6090(98)01383-2]
Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detector
MANDRACCI, Pietro;GIORGIS, FABRIZIO
1999
Abstract
UV detectors based on a-Si:H/a-SiC:H were deposited by plasma enhanced chemical vapor deposition and characterized in terms of their photoelectrical properties. A quantum efficiency of 90%, corresponding to 0.28 A/W, at 365 nm was measured for devices having p-layer and i-layer thickness less than 10 nm. A good uniformity (15%) was achieved on area of 5×5 cm. A linear dependence of the photocurrent as a function of impinging photon flux, corresponding to a constant responsivity, was found. Aging experiments were performed by UV irradiation both on devices and on thin films inserted in the detectors with the aim of investigating the possible correlations.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/1402507
Attenzione
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo