In this work, we discuss on the physical properties of hydrogenated amorphous silicon carbide (a-Si1−xCx:H) thin films deposited by plasma enhanced CVD by using SiH4+CH4 and SiH4+C2H2 gas mixtures under several deposition conditions. We can argue a complete chemical order in the samples deposited by SiH4+CH4 for x>0.4, while for those grown by SiH4+C2H2, such order is preserved for lower C content. With regards to the radiative properties, for all the under-stoichiometric samples the photoluminescence (PL) Stokes shifts result to be strictly correlated to the absorption properties within the static disorder model. For C-rich materials, the electronic density of states becomes much more complex than in Si-rich ones because of the possibility of sp2 and sp3 configurations for C bonds, so that the presence of localized tail states cannot explain anymore the PL properties.
Structural and optical properties of a-Si1−xCx:H grown by plasma enhanced CVD / Giorgis, Fabrizio; G., Ambrosone; U., Coscia; Ferrero, Sergio; Mandracci, Pietro; Pirri, Candido. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 184 (1-4):(2001), pp. 204-208. (Intervento presentato al convegno European Materials Research Soceity 2001. Symposium F, Amorphous and crystalline Silicon Carbide: material and applications tenutosi a Strasbourg (FRA) nel 5 June 2001) [10.1016/S0169-4332(01)00492-5].
Structural and optical properties of a-Si1−xCx:H grown by plasma enhanced CVD
GIORGIS, FABRIZIO;FERRERO, SERGIO;MANDRACCI, Pietro;PIRRI, Candido
2001
Abstract
In this work, we discuss on the physical properties of hydrogenated amorphous silicon carbide (a-Si1−xCx:H) thin films deposited by plasma enhanced CVD by using SiH4+CH4 and SiH4+C2H2 gas mixtures under several deposition conditions. We can argue a complete chemical order in the samples deposited by SiH4+CH4 for x>0.4, while for those grown by SiH4+C2H2, such order is preserved for lower C content. With regards to the radiative properties, for all the under-stoichiometric samples the photoluminescence (PL) Stokes shifts result to be strictly correlated to the absorption properties within the static disorder model. For C-rich materials, the electronic density of states becomes much more complex than in Si-rich ones because of the possibility of sp2 and sp3 configurations for C bonds, so that the presence of localized tail states cannot explain anymore the PL properties.Pubblicazioni consigliate
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https://hdl.handle.net/11583/1402506
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