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Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 mu m. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modeling

InP based lasers and optical amplifiers with wire-/dot-like active regions / J. P., Reithmaier; A. SOMERS S., Deubert; R., Schwertberger; W., Kaiser; A., Forchel; M., Calligaro; P., Resneau; O., Parillaud; S., Bansropun; M., Krakowski; R., Alizon; D., Hadass; A., Bilenca; H., Dery; V., Mikhelashvili; G., Eisenstein; Gioannini, Mariangela; Montrosset, Ivo; T. W., Berg; M., VAN DER POEL; J., Mork; B., Tromborg. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - STAMPA. - 38:(2005), pp. 2088-2102. [10.1088/0022-3727/38/13/004]

InP based lasers and optical amplifiers with wire-/dot-like active regions

GIOANNINI, Mariangela;MONTROSSET, Ivo;
2005

Abstract

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 mu m. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modeling
2005
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11583/1400872
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