Amorphous silicon nitrogen alloys deposited by PECVD under hydrogen dilution conditions

Rava, P; Giuliani, F; Giorgis, Fabrizio; Pirri, Candido; Tresso, Elena Maria; Mandracci, Pietro; Summonte, C; Rizzoli, R; Desalvo, A.

Amorphous silicon-nitrogen (a-Si1-xNx:H) alloys with x in the range 0.01-0.57 have been deposited in a dedicated chamber by ultra high vacuum PECVD in SiH4+NH3 and SiH4+NH3+H-2 gas mixtures. A picture of optical, compositional and structural properties was deduced for the entire compositional range by optical spectroscopy, Rutherford Backscattering Spectrometry, elastic recoil detection analysis and infrared spectroscopy. Defect and photoelectrical properties have been investigated for the films having optical gap in the range 1.9-2.7 eV.

Amorphous silicon nitrogen alloys deposited by PECVD under hydrogen dilution conditions / RAVA P; GIULIANI F; GIORGIS F; PIRRI C.F; TRESSO E; MANDRACCI P.; SUMMONTE C; RIZZOLI R; DESALVO A. - In: PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING. - ISSN 0277-786X. - 3316 (1)(1998), pp. 580-583. ((Intervento presentato al convegno IX International Workshop on the Physics of Semiconductor Devices (IWPSD) tenutosi a DELHI, INDIA nel DEC 16-20, 1997.

Titolo:	Amorphous silicon nitrogen alloys deposited by PECVD under hydrogen dilution conditions
Autori:	RAVA P GIULIANI F GIORGIS, FABRIZIO PIRRI, Candido TRESSO, Elena Maria MANDRACCI, PIETRO SUMMONTE C RIZZOLI R DESALVO A. mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	1998
Rivista:	PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING
Abstract:	Amorphous silicon-nitrogen (a-Si1-xNx:H) alloys with x in the range 0.01-0.57 have been deposited... in a dedicated chamber by ultra high vacuum PECVD in SiH4+NH3 and SiH4+NH3+H-2 gas mixtures. A picture of optical, compositional and structural properties was deduced for the entire compositional range by optical spectroscopy, Rutherford Backscattering Spectrometry, elastic recoil detection analysis and infrared spectroscopy. Defect and photoelectrical properties have been investigated for the films having optical gap in the range 1.9-2.7 eV.
ISBN:	9780819427564
Appare nelle tipologie:	4.1 Contributo in Atti di convegno

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