statistiche ricercatore

Continente	#
NA - Nord America	2.514
EU - Europa	1.860
AS - Asia	1.002
SA - Sud America	70
Continente sconosciuto - Info sul continente non disponibili	35
AF - Africa	21
OC - Oceania	2
Totale	5.504

Nazione	#
US - Stati Uniti d'America	2.483
IT - Italia	507
DE - Germania	367
FR - Francia	299
GB - Regno Unito	273
SG - Singapore	248
VN - Vietnam	219
CN - Cina	193
RU - Federazione Russa	122
HK - Hong Kong	96
UA - Ucraina	76
KR - Corea	66
BR - Brasile	53
TR - Turchia	42
AT - Austria	41
IN - India	26
CH - Svizzera	25
JP - Giappone	25
SE - Svezia	25
NL - Olanda	24
FI - Finlandia	23
IE - Irlanda	21
BE - Belgio	20
CA - Canada	15
MY - Malesia	13
TW - Taiwan	13
ID - Indonesia	11
PK - Pakistan	11
PH - Filippine	10
PL - Polonia	10
BD - Bangladesh	8
TH - Thailandia	7
CO - Colombia	6
MX - Messico	6
AZ - Azerbaigian	4
EU - Europa	4
IQ - Iraq	4
MA - Marocco	4
CI - Costa d'Avorio	3
CL - Cile	3
EG - Egitto	3
GR - Grecia	3
KE - Kenya	3
SN - Senegal	3
AM - Armenia	2
AU - Australia	2
CW - ???statistics.table.value.countryCode.CW???	2
EC - Ecuador	2
ES - Italia	2
IL - Israele	2
JM - Giamaica	2
JO - Giordania	2
NI - Nicaragua	2
OM - Oman	2
RO - Romania	2
SA - Arabia Saudita	2
TN - Tunisia	2
AR - Argentina	1
BO - Bolivia	1
BS - Bahamas	1
BY - Bielorussia	1
CG - Congo	1
CR - Costa Rica	1
CZ - Repubblica Ceca	1
DO - Repubblica Dominicana	1
EE - Estonia	1
GE - Georgia	1
GP - Guadalupe	1
GT - Guatemala	1
HR - Croazia	1
LB - Libano	1
MD - Moldavia	1
MU - Mauritius	1
NO - Norvegia	1
PE - Perù	1
PT - Portogallo	1
PY - Paraguay	1
QA - Qatar	1
SI - Slovenia	1
SV - El Salvador	1
SY - Repubblica araba siriana	1
UY - Uruguay	1
UZ - Uzbekistan	1
VE - Venezuela	1
ZA - Sudafrica	1
Totale	5.472

Nome	#
Advances in quantum tunneling models for semiconductor optoelectronic device simulation	1.148
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework	485
Role of defects in the thermal droop of InGaN-based light emitting diodes	461
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes	427
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs	398
Modeling challenges for high-efficiency visible light-emitting diodes	377
Trap-assisted tunneling in InGaN/GaN LEDs: experiments and physics-based simulation	365
Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties	351
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes	338
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes	320
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects	311
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors	305
Simulation and first characterization of MAPS test structures with gain for timing applications	157
Towards a 20 ps timing detector with hybrid and CMOS monolithic LGADs for the future ALICE 3 experiment at LHC	31
Preliminary results on the timing response of CMOS LGADs for the ALICE 3 experiment	28
Towards a muon collider	2
Totale	5.504

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	250	0	0	0	0	25	19	17	20	28	20	39	82
2022/2023	346	35	60	16	48	50	40	8	10	33	11	12	23
2023/2024	95	5	6	4	6	12	4	0	17	5	6	20	10
2024/2025	355	6	57	25	35	50	37	21	16	44	17	18	29
2025/2026	1.018	51	34	57	59	71	60	207	85	243	85	18	48
2026/2027	293	32	27	75	143	16	0	0	0	0	0	0	0
Totale													5.504

PORTO @ Archivio Istituzionale della Ricerca