SANDRINI, JURY
Mostra
records
Risultati 1 - 2 di 2 (tempo di esecuzione: 0.003 secondi).
Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)
2019 Giovinazzo, Cecilia; Sandrini, Jury; Shahrabi, Elmira; Celik, Oguz Tolga; Leblebici, Yusuf; Ricciardi, Carlo
The key impact of incorporated Al2O3barrier layer on W-based ReRAM switching performance
2018 Shahrabi, Elmira; Giovinazzo, Cecilia; Sandrini, Jury; Leblebici, Yusuf
Citazione | Data di pubblicazione | Autori | File |
---|---|---|---|
Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs) / Giovinazzo, Cecilia; Sandrini, Jury; Shahrabi, Elmira; Celik, Oguz Tolga; Leblebici, Yusuf; Ricciardi, Carlo. - In: ACS APPLIED ELECTRONIC MATERIALS. - ISSN 2637-6113. - ELETTRONICO. - 1:6(2019), pp. 900-909. [10.1021/acsaelm.9b00094] | 1-gen-2019 | Giovinazzo, CeciliaSandrini, JuryRicciardi, Carlo + | 2019_Cecilia_HfOx_ACSaelm.pdf |
The key impact of incorporated Al2O3barrier layer on W-based ReRAM switching performance / Shahrabi, Elmira; Giovinazzo, Cecilia; Sandrini, Jury; Leblebici, Yusuf. - (2018), pp. 69-72. (Intervento presentato al convegno 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 tenutosi a cze nel 2018) [10.1109/PRIME.2018.8430371]. | 1-gen-2018 | GIOVINAZZO, CECILIASANDRINI, JURY + | - |