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ASCOLI, ALON

ASCOLI, ALON  

Dipartimento di Elettronica e Telecomunicazioni  

023809  

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Risultati 1 - 20 di 96 (tempo di esecuzione: 0.017 secondi).
Citazione Data di pubblicazione Autori File
A pseudo-memcapacitive neurotransistor for spiking neural networks / Schroedter,  r; Demirkol, A. S.; Ascoli, A.; Max, B.; Nebe, F.; Mikolajick, T.; Tetzlaff, R.. - ELETTRONICO. - (2023). (Intervento presentato al convegno International Conference on Modern Circuits and Systems Technologies (MOCAST) tenutosi a Athens, Greece nel 28-30 June 2023) [10.1109/MOCAST57943.2023.10176398]. 1-gen-2023 Ascoli, A. + A pseudo-memcapacitive neurotransistor for spiking neural networks.pdf
A Qualitative Approach for the Design of a Locally Active Memristor Based Neuron Circuit / Demirkol, A. S.; Ascoli, A.; Tetzlaff, R.; Eshraghian, J. K.; Kang, S. M.. - ELETTRONICO. - (2023). (Intervento presentato al convegno IEEE International Conference on Electronics, Circuits and Systems (ICECS) tenutosi a Istanbul, Turkey nel 04-07 December 2023) [10.1109/ICECS58634.2023.10382929]. 1-gen-2023 Ascoli, A. + A Qualitative Approach for the Design of a Locally Active Memristor Based Neuron Circuit.pdf
A Simplified Variability-Aware VCM Memristor Model for Efficient Circuit Simulation / Ntinas, V.; Patel, D.; Wang, Y.; Messaris, I.; Rana, V.; Menzel, S.; Ascoli, A.; Tetzlaff, R.. - ELETTRONICO. - (2023). (Intervento presentato al convegno International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) tenutosi a Funchal, Portugal nel 03-05 July 2023) [10.1109/SMACD58065.2023.10192107]. 1-gen-2023 Ascoli, A. + A Simplified Variability-Aware VCM Memristor Model for Efficient Circuit Simulation.pdf
Analytical Derivation of Sharp-Edge-of-Chaos Domain in a One-Dimensional Memristor Array / Demirkol, A. S.; Ascoli, A.; Messaris, I.; Tetzlaff, R.. - ELETTRONICO. - (2023). (Intervento presentato al convegno IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering (MetroXRAINE) tenutosi a Milano, Italy nel 25-27 October 2023) [10.1109/METROXRAINE58569.2023.10405835]. 1-gen-2023 Ascoli, A. + Analytical Derivation of Sharp-Edge-of-Chaos Domain in a One-Dimensional Memristor Array.pdf
DC Characterization of Numerically Efficient and Stable Locally Active Device Models / Demirkol, A. S.; Messaris, I.; Ascoli, A.; Tetzlaff, R.. - ELETTRONICO. - (2023). (Intervento presentato al convegno International Conference on Modern Circuits and Systems Technologies (MOCAST) tenutosi a Athens, Greece nel 28-30 June 2023) [10.1109/MOCAST57943.2023.10176722]. 1-gen-2023 Ascoli, A. + DC Characterization of Numerically Efficient and Stable Locally Active Device Models.pdf
Design and Analysis of Isolated Voltage-Mode Memristor Cellular Nonlinear Network Cells / Ntinas, V; Wang, Y; Demirkol, As; Messaris, I; Rana, V; Menzel, S; Ascoli, A; Tetzlaff, R. - ELETTRONICO. - (2023). (Intervento presentato al convegno IEEE International Symposium on Circuits and Systems (ISCAS), 2023 tenutosi a Monterey, California (USA) nel 21-25 May 2023) [10.1109/ISCAS46773.2023.10181832]. 1-gen-2023 Ascoli A + Design and Analysis of Isolated Voltage-Mode Memristor Cellular Nonlinear Network Cells.pdf
Dynamics of a Memristive Bridge with Valence Change Mechanism (VCM) Devices / Prousalis, D; Ntinas, V; Messaris, I; Demirkol, As; Ascoli, A; Tetzlaff, R. - ELETTRONICO. - (2023). (Intervento presentato al convegno IEEE International Symposium on Circuits and Systems (ISCAS), 2023 tenutosi a Monterey, California (USA) nel 21-25 May 2023) [10.1109/ISCAS46773.2023.10181704]. 1-gen-2023 Ascoli A + Dynamics of a Memristive Bridge with Valence Change Mechanism (VCM) Devices.pdf
Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task / Wang, Y.; Ascoli, A.; Wiefels, S.; Schnieders, K.; Cüppers, F.; Tetzlaff, R.; Menzel, S.; Ntinas, V.; Hoffmann-Eifert, S.; Rana, V.. - ELETTRONICO. - (2023). (Intervento presentato al convegno 18. ACM International Symposium on Nanoscale Architectures (NANOARCH) tenutosi a Dresden (Germany) nel 18-20 December 2023) [10.1145/3611315.3633274]. 1-gen-2023 Ascoli, A. + Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task.pdf
Exploration of Bistable Oscillatory Dynamics in a Memristor from Forschungszentrum Jülich / Schmitt, N.; Ascoli, A.; Messaris, I.; Demirkol, A. S.; Ntinas, V.; Prousalis, D.; Tetzlaff, R.; Nikolaidis, S.; Menzel, S.; Rana, V.. - ELETTRONICO. - (2023). (Intervento presentato al convegno International Conference on Modern Circuits and Systems Technologies (MOCAST) tenutosi a Athens, Greece nel 28-30 June 2023) [10.1109/MOCAST57943.2023.10177018]. 1-gen-2023 Ascoli, A. + Exploration of Bistable Oscillatory Dynamics in a Memristor from Forschungszentrum Jülich.pdf
Implementation of the XOR gate with two memristive neurons / Horváth, A.; Ascoli, A.; Tetzlaff, R.. - ELETTRONICO. - (2023). (Intervento presentato al convegno International Conference on Modern Circuits and Systems Technologies (MOCAST) tenutosi a Athens, Greece nel 28-30 June 2023) [10.1109/MOCAST57943.2023.10176435]. 1-gen-2023 Ascoli, A. + Implementation of the XOR gate with two memristive neurons.pdf
Local Fading Memory Effects in a Tantalum Oxide ReRAM Cell from Hewlett Packard Labs / Ascoli, A; Schmitt, N.; Messaris, I.; Demirkol, A. S.; Tetzlaff, R.; Strachan, J. P.; Chua, L. O.. - ELETTRONICO. - (2023), pp. 971-976. (Intervento presentato al convegno IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering (MetroXRAINE) tenutosi a Milano, Italy nel 25-27 October 2023) [10.1109/METROXRAINE58569.2023.10405685]. 1-gen-2023 Ascoli, A + Local Fading Memory Effects in a Tantalum Oxide ReRAM Cell from Hewlett Packard Labs.pdf
Multitasking and Memcomputing in Memristor Cellular Nonlinear Networks Insights into the Underlying Mechanisms / Messaris, I.; Ascoli, A.; Prousalis, D.; Ntinas, V.; Demirkol, A. S.; Tetzlaff, R.. - ELETTRONICO. - (2023). (Intervento presentato al convegno IEEE International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) tenutosi a Funchal, Portugal nel 03-05 July 2023) [10.1109/SMACD58065.2023.10192210]. 1-gen-2023 Ascoli, A. + Multitasking and Memcomputing in Memristor Cellular Nonlinear Networks Insights into the Underlying Mechanisms.pdf
Nanoscale Mem-Devices for Chemical Sensing / Ibarlucea, B.; Yildirim, E. E.; Tetzlaff, R.; Ascoli, A.; Panes-Ruiz, L. -A.; Cuniberti, G.. - ELETTRONICO. - (2023). (Intervento presentato al convegno IEEE International Conference on Electronics, Circuits and Systems (ICECS) tenutosi a Istanbul, Turkiye nel 04-07 December 2023) [10.1109/ICECS58634.2023.10382795]. 1-gen-2023 Ascoli, A. + Nanoscale Mem-Devices for Chemical Sensing.pdf
Stochastic template in cellular nonlinear networks modeling memristor induced synaptic noise / Prousalis, D.; Ntinas, V.; Messaris, I.; Demirkol, A. S.; Ascoli, A.; Tetzlaff, R.. - ELETTRONICO. - (2023). (Intervento presentato al convegno 18. ACM International Symposium on Nanoscale Architectures (NANOARCH) tenutosi a Dresden (Germany) nel 18-20 December 2023) [10.1145/3611315.3633261]. 1-gen-2023 Ascoli, A. + Stochastic template in cellular nonlinear networks modeling memristor induced synaptic noise.pdf
A Locally Active Device Model Based on a Minimal 2T1R Circuit / Demirkol, A S; Al Chawa, M M; Ascoli, A; Tetzlaff, R; Bedau, D; Grobis, M. - ELETTRONICO. - (2022). (Intervento presentato al convegno 2022 IEEE International Conference on Electronics, Circuits and Systems (ICECS) tenutosi a Glasgow (United Kingdom) nel 24-26 October 2022) [10.1109/ICECS202256217.2022.9970873]. 1-gen-2022 Ascoli A + A_Locally_Active_Device_Model_Based_on_a_Minimal_2T1R_Circuit.pdf
Analytical Study of the Fading Memory Phenomenon in a TaOx Memristor Model / Messaris, I; Ascoli, A; Demirkol, As; Ntinas, V; Tetzlaff, R. - ELETTRONICO. - (2022). (Intervento presentato al convegno 2022 IEEE Int. Conference on Electronics, Circuits and Systems (ICECS) tenutosi a Glasgow (United Kingdom) nel 24-26 October 2022) [10.1109/ICECS202256217.2022.9970855]. 1-gen-2022 Ascoli A + Analytical_Study_of_the_Fading_Memory_Phenomenon_in_a_TaOx_Memristor_Model.pdf
Deep Memristive Cellular Neural Networks for Image Classification / Horváth, A; Ascoli, A; Tetzlaff, R. - ELETTRONICO. - (2022), pp. 457-460. (Intervento presentato al convegno 2022 IEEE 22nd International Conference on Nanotechnology (NANO) tenutosi a Palma de Mallorca (Spain) nel 04-08 July 2022) [10.1109/NANO54668.2022.9928688]. 1-gen-2022 Ascoli A + Deep Memristive Cellular Neural Networks for Image Classification.pdf
Edge of Chaos Behind Bistability of the Inhomogeneous in Homogeneous Cellular Media / Ascoli, A; Demirkol, As; Schmitt, N; Tetzlaff, R; Chua, Lo. - ELETTRONICO. - (2022), pp. 193-198. (Intervento presentato al convegno IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence, and Neural Engineering (MetroXRAINE) tenutosi a Rome (Italy) nel 26-28 October 2022) [10.1109/MetroXRAINE54828.2022.9967680]. 1-gen-2022 Ascoli A + Edge of Chaos Behind Bistability of the Inhomogeneous in Homogeneous Cellular Media.pdf
Performance Analysis of Memristive-CNN based on a VCM Device Model / Wang, Y; Ascoli, A; Tetzlaff, R; Rana, V; Menzel, S. - ELETTRONICO. - (2022), pp. 1184-1188. (Intervento presentato al convegno 2022 IEEE International Symposium on Circuits and Systems (ISCAS) tenutosi a Austin, TX (USA) nel 27 May 2022 - 01 June 2022) [10.1109/ISCAS48785.2022.9937918]. 1-gen-2022 Ascoli A + Performance_Analysis_of_Memristive-CNN_based_on_a_VCM_Device_Model.pdf
Physics-based modeling of a bi-layer Al2O3/Nb2O5 analog memristive device / Schroedter r, ; Mgeladze, E; Herzig, M; Ascoli, A; Slesazeck, S; Mikolajick, T; Tetzlaff, R. - ELETTRONICO. - (2022), pp. 1097-1101. (Intervento presentato al convegno 2022 IEEE International Symposium on Circuits and Systems (ISCAS) tenutosi a Austin, TX (USA) nel 27 May 2022 - 01 June 2022) [10.1109/ISCAS48785.2022.9937966]. 1-gen-2022 Ascoli A + Physics-based_modeling_of_a_bi-layer_AlO_NbO_analog_memristive_device.pdf