Charge/energy separation across interfaces of plasmonic materials is vital for minimizing plasmonic losses and enhancing their performance in photochemical and optoelectronic applications. While heterostructures combining plasmonic two-dimensional transition metal carbides/nitrides (MXenes) and semiconducting transition metal dichalcogenides (TMDs) hold significant potential, the mechanisms governing plasmon-induced carrier dynamics at these interfaces remain elusive. Here, we uncover a distinctive secondary excitation phenomenon and an ultrafast charge/energy transfer process in heterostructure films composed of macro-scale Ti3C2Tx and MoS2 films. Using Rayleigh-Bénard convection and Marangoni effect-induced self-assembly, we fabricate large-scale (square centimeters) Ti3C2Tx and MoS2 films composed of edge-connected monolayer nanoflakes. These films are flexibly stacked in a controlled sequence to form macroscopic heterostructures, enabling the investigation and manipulation of excited-state dynamics using transient absorption and optical pump-terahertz probe spectroscopy. In the Ti3C2Tx-MoS2 heterostructure, we observe a secondary excitation in MoS2 driven by the surface plasmon resonance of Ti3C2Tx. This phenomenon, with a characteristic rise time constant of 70 ps, is likely facilitated by acoustic phonon recycling across the interface. Further interfacial thermal transport engineering─achieved by tailoring the sequence and combination of interfaces in trilayer heterostructures─allows extending the characteristic time to ∼175 ps. Furthermore, we identify a sub-150 fs ultrafast charge/energy transfer process from Ti3C2Tx to MoS2. The transfer efficiency is strongly dependent on the excitation photon energy, resulting in amplified photoconductivity in MoS2 by up to 180% under 3.10 eV excitation. These insights are crucial for developing plasmonic MXene-based heterostructures, paving the way for advancements in photochemical and optoelectronic applications.
Interface-Tailored Secondary Excitation and Ultrafast Charge/Energy Transfer in Ti3C2Tx-MoS2 Heterostructure Films / Zhang, J., Muñoz-Mármol, R., Fu, S., Li, X., Zheng, W., Villa, A., Paternò, G.M., Pohl, D., Tahn, A., Hambsch, M., Mannsfeld, S.C.B., Li, D., Xu, H., Guo, Q., Wang, H.I., Scotognella, F., Yu, M., Feng, X.. - In: JOURNAL OF THE AMERICAN CHEMICAL SOCIETY. - ISSN 0002-7863. - ELETTRONICO. - 147:11(2025), pp. 10012-10022. [10.1021/jacs.5c01826]
Interface-Tailored Secondary Excitation and Ultrafast Charge/Energy Transfer in Ti3C2Tx-MoS2 Heterostructure Films
Scotognella, Francesco;
2025
Abstract
Charge/energy separation across interfaces of plasmonic materials is vital for minimizing plasmonic losses and enhancing their performance in photochemical and optoelectronic applications. While heterostructures combining plasmonic two-dimensional transition metal carbides/nitrides (MXenes) and semiconducting transition metal dichalcogenides (TMDs) hold significant potential, the mechanisms governing plasmon-induced carrier dynamics at these interfaces remain elusive. Here, we uncover a distinctive secondary excitation phenomenon and an ultrafast charge/energy transfer process in heterostructure films composed of macro-scale Ti3C2Tx and MoS2 films. Using Rayleigh-Bénard convection and Marangoni effect-induced self-assembly, we fabricate large-scale (square centimeters) Ti3C2Tx and MoS2 films composed of edge-connected monolayer nanoflakes. These films are flexibly stacked in a controlled sequence to form macroscopic heterostructures, enabling the investigation and manipulation of excited-state dynamics using transient absorption and optical pump-terahertz probe spectroscopy. In the Ti3C2Tx-MoS2 heterostructure, we observe a secondary excitation in MoS2 driven by the surface plasmon resonance of Ti3C2Tx. This phenomenon, with a characteristic rise time constant of 70 ps, is likely facilitated by acoustic phonon recycling across the interface. Further interfacial thermal transport engineering─achieved by tailoring the sequence and combination of interfaces in trilayer heterostructures─allows extending the characteristic time to ∼175 ps. Furthermore, we identify a sub-150 fs ultrafast charge/energy transfer process from Ti3C2Tx to MoS2. The transfer efficiency is strongly dependent on the excitation photon energy, resulting in amplified photoconductivity in MoS2 by up to 180% under 3.10 eV excitation. These insights are crucial for developing plasmonic MXene-based heterostructures, paving the way for advancements in photochemical and optoelectronic applications.| File | Dimensione | Formato | |
|---|---|---|---|
|
Zhang et al. - 2025 - Interface-Tailored Secondary Excitation and Ultrafast ChargeEnergy Transfer in Ti3C2Tx-MoS2 Heteros.pdf
accesso aperto
Tipologia:
2a Post-print versione editoriale / Version of Record
Licenza:
Creative commons
Dimensione
8.74 MB
Formato
Adobe PDF
|
8.74 MB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/3010855
