Archivio Istituzionale della RicercaPorous GaAs was formed electrochemically on n-type GaAs in a HF:C2H5OH (1:3) electrolyte. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). The hodographs of the total impedance and the adsorption influence of ethanol and acetone vapor on the charge transfer were examined.
Influence of gas adsorption on the impedance of porous GaAs / Milovanov, Y. S.; Gavrilchenko, I. V.; Kondratenko, S. V.; Oksanich, A. P.; Pritchin, S. E.; Kogdas, M. G.. - In: FUNCTIONAL MATERIALS. - ISSN 1027-5495. - 24:1(2017), pp. 52-55. [10.15407/fm24.01.052]
Influence of gas adsorption on the impedance of porous GaAs
Milovanov Y. S.;
2017
Abstract
Porous GaAs was formed electrochemically on n-type GaAs in a HF:C2H5OH (1:3) electrolyte. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). The hodographs of the total impedance and the adsorption influence of ethanol and acetone vapor on the charge transfer were examined.
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Utilizza questo identificativo per citare o creare un link a questo documento:
https://hdl.handle.net/11583/3004313