We present a study of the superconducting penetration depth lambda in aluminum thin films of varying thickness. The range of thicknesses chosen spans from the thin-film regime to the regime approaching bulk behaviour. The penetration depths observed range from lambda = 163 +- 1nm for the thinnest 28 nm samples down to lambda = 58 +- 1nm for the 207 nm-thick ones, allowing us to provide an estimate of the thickness at which aluminum becomes a type-I superconductor. In order to accurately determine lambda, we performed complementary measurements using the frequency of superconducting LC resonators obtained through novel and efficient methods of fitting and simulation, as well as the normal-state resistance of meandered structures. Both methods yield comparable results, providing a well-characterized set of values of lambda in aluminum in the relevant range for applications in fields such as quantum computing and microwave radiation detector technologies.
Superconducting penetration depth of Aluminum thin films / López-Núñez, David; Torras-Coloma, Alba; Portell-Montserrat, Queralt; Bertoldo, Elia; Cozzolino, Luca; Ummarino, Giovanni Alberto; Zaccone, Alessio; Rius, Gemma; Martinez, Manel; Forn-Díaz, Pol. - In: SUPERCONDUCTOR SCIENCE & TECHNOLOGY. - ISSN 0953-2048. - (2025). [10.1088/1361-6668/adf360]
Superconducting penetration depth of Aluminum thin films
Ummarino, Giovanni Alberto;Zaccone, Alessio;
2025
Abstract
We present a study of the superconducting penetration depth lambda in aluminum thin films of varying thickness. The range of thicknesses chosen spans from the thin-film regime to the regime approaching bulk behaviour. The penetration depths observed range from lambda = 163 +- 1nm for the thinnest 28 nm samples down to lambda = 58 +- 1nm for the 207 nm-thick ones, allowing us to provide an estimate of the thickness at which aluminum becomes a type-I superconductor. In order to accurately determine lambda, we performed complementary measurements using the frequency of superconducting LC resonators obtained through novel and efficient methods of fitting and simulation, as well as the normal-state resistance of meandered structures. Both methods yield comparable results, providing a well-characterized set of values of lambda in aluminum in the relevant range for applications in fields such as quantum computing and microwave radiation detector technologies.File | Dimensione | Formato | |
---|---|---|---|
López-Núñez et al_2025_Supercond._Sci._Technol._10.1088_1361-6668_adf360.pdf
accesso aperto
Tipologia:
2. Post-print / Author's Accepted Manuscript
Licenza:
Creative commons
Dimensione
8.07 MB
Formato
Adobe PDF
|
8.07 MB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
https://hdl.handle.net/11583/3002547